Liu, Cheh-Ming and Sovero, Emilio A. and Ho, Wu Jing and Higgins, J. A. and De Lisio, Michael P. and Rutledge, David B. (1996) Monolithic 40-GHz 670-m W HBT Grid Amplifier. In: 1996 IEEE MTT-S International Microwave Symposium Digest. IEEE MTT-S International Microwave Symposium Digest. IEEE , Piscataway, N.J., pp. 1123-1126. ISBN 0-7803-3246-6 http://resolver.caltech.edu/CaltechAUTHORS:20120208-113853373
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A 36-element monolithic grid amplifier has been fabricated. The active elements are pairs of heterojunction-bipolar-transistors. Measurements show a peak gain of 5 dB at 40 GHz with a 3-dB bandwidth of 1.8 GHz (4.5%). Here we also report comparisons of patterns and tuning curves between the measurements and theory. The grid includes base stabilizing capacitors which result in a highly stable grid. The maximum saturated output power is 670 mW at 40 GHz with a peak power-added efficiency of 4%. This is the first report of power measurements on the monolithic quasi-optical amplifier.
|Item Type:||Book Section|
|Additional Information:||© 1996 IEEE. Manuscript submitted February 22, 1996. Date of Current Version: 06 August 2002. This research was supported by the Air Force Material Command/Rome Laboratory, ARPA Contract #F30602-93-C-0188, and the Army Research Office.|
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|Official Citation:||Cheh-Ming Liu; Sovero, E.A.; Wu Jing Ho; Higgins, J.A.; De Lisio, M.P.; Rutledge, D.B.; , "Monolithic 40-GHz 670-mW HBT grid amplifier," Microwave Symposium Digest, 1996., IEEE MTT-S International , vol.2, no., pp.1123-1126 vol.2, 17-21 Jun 1996 doi: 10.1109/MWSYM.1996.511227 URL: http://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=511227&isnumber=11021|
|Usage Policy:||No commercial reproduction, distribution, display or performance rights in this work are provided.|
|Deposited By:||Ruth Sustaita|
|Deposited On:||08 Feb 2012 20:16|
|Last Modified:||08 Feb 2012 20:16|
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