Pettersson, P. O. and Ahn, C. C. and McGill, T. C. and Croke, E. T. and Hunter, A. T. (1996) Characterization of Si/Si_(1-y)C_y superlattices grown by surfactant assisted molecular beam epitaxy. Journal of Vacuum Science and Technology B, 14 (4). pp. 3030-3034. ISSN 1071-1023. http://resolver.caltech.edu/CaltechAUTHORS:20120208-152428438
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Si/Si_(0.97)C_(0.03) superlattices grown on Si(001) substrates by Sb surfactant assisted molecular beam epitaxy are characterized by in situ reflection high energy electron diffraction (RHEED), atomic force microscopy, transmission electron microscopy (TEM), and high resolution x‐ray diffraction. The RHEED shows that, in the absence of Sb, the growth front roughens during Si_(0.97)C_(0.03) growth and smooths during subsequent Si growth. In contrast, when Sb is present, the growth front remains smooth throughout the growth. This observation is confirmed by cross‐sectional TEM, which reveals that for samples grown without the use of Sb, the Si/Si_(0.97)C_(0.03) interfaces (Si_(0.97)C_(0.03) on Si) are much more abrupt than the Si_(0.97)C_(0.03)/Si interfaces. In the case of Sb assisted growth, there is no observable difference in abruptness between the two types of interfaces. Atomic force microscopy micrographs of the Si_(0.97)C_(0.03) surface reveal features that could be the source of the roughness observed by RHEED and TEM.
|Additional Information:||© 1996 American Vacuum Society. Received 22 January 1996; accepted 26 April 1996. This study was supported in part by the Office of Naval Research under Grant No. N00014-93-1-0710. In addition, the authors would like to thank Carol Garland for her assistance in obtaining the TEM images presented in this work.|
|Subject Keywords:||Interface Structure, Surface Structure, Temperature Range 400−1000 K, Superlatticess, Silicon, Silicon Carbides, Molecular Beam Epitaxy, Roughness|
|Classification Code:||PACS: 68.65.-k, 81.15.Hi, 68.35.Ct|
|Official Citation:||Characterization of Si/Si1−yCy superlattices grown by surfactant assisted molecular beam epitaxy P. O. Pettersson, C. C. Ahn, T. C. McGill, E. T. Croke, and A. T. Hunter J. Vac. Sci. Technol. B 14, 3030 (1996); doi:10.1116/1.589059|
|Usage Policy:||No commercial reproduction, distribution, display or performance rights in this work are provided.|
|Deposited By:||Ruth Sustaita|
|Deposited On:||09 Feb 2012 16:36|
|Last Modified:||26 Dec 2012 14:49|
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