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Characterization of Si/Si_(1-y)C_y superlattices grown by surfactant assisted molecular beam epitaxy

Pettersson, P. O. and Ahn, C. C. and McGill, T. C. and Croke, E. T. and Hunter, A. T. (1996) Characterization of Si/Si_(1-y)C_y superlattices grown by surfactant assisted molecular beam epitaxy. Journal of Vacuum Science and Technology B, 14 (4). pp. 3030-3034. ISSN 1071-1023. http://resolver.caltech.edu/CaltechAUTHORS:20120208-152428438

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Abstract

Si/Si_(0.97)C_(0.03) superlattices grown on Si(001) substrates by Sb surfactant assisted molecular beam epitaxy are characterized by in situ reflection high energy electron diffraction (RHEED), atomic force microscopy, transmission electron microscopy (TEM), and high resolution x‐ray diffraction. The RHEED shows that, in the absence of Sb, the growth front roughens during Si_(0.97)C_(0.03) growth and smooths during subsequent Si growth. In contrast, when Sb is present, the growth front remains smooth throughout the growth. This observation is confirmed by cross‐sectional TEM, which reveals that for samples grown without the use of Sb, the Si/Si_(0.97)C_(0.03) interfaces (Si_(0.97)C_(0.03) on Si) are much more abrupt than the Si_(0.97)C_(0.03)/Si interfaces. In the case of Sb assisted growth, there is no observable difference in abruptness between the two types of interfaces. Atomic force microscopy micrographs of the Si_(0.97)C_(0.03) surface reveal features that could be the source of the roughness observed by RHEED and TEM.


Item Type:Article
Related URLs:
URLURL TypeDescription
http://dx.doi.org/10.1116/1.589059DOIUNSPECIFIED
http://avspublications.org/jvstb/resource/1/jvtbd9/v14/i4/p3030_s1PublisherUNSPECIFIED
Additional Information:© 1996 American Vacuum Society. Received 22 January 1996; accepted 26 April 1996. This study was supported in part by the Office of Naval Research under Grant No. N00014-93-1-0710. In addition, the authors would like to thank Carol Garland for her assistance in obtaining the TEM images presented in this work.
Funders:
Funding AgencyGrant Number
Office of Naval Research (ONR)N00014-93-1-0710
Subject Keywords:Interface Structure, Surface Structure, Temperature Range 400−1000 K, Superlatticess, Silicon, Silicon Carbides, Molecular Beam Epitaxy, Roughness
Classification Code:PACS: 68.65.-k, 81.15.Hi, 68.35.Ct
Record Number:CaltechAUTHORS:20120208-152428438
Persistent URL:http://resolver.caltech.edu/CaltechAUTHORS:20120208-152428438
Official Citation:Characterization of Si/Si1−yCy superlattices grown by surfactant assisted molecular beam epitaxy P. O. Pettersson, C. C. Ahn, T. C. McGill, E. T. Croke, and A. T. Hunter J. Vac. Sci. Technol. B 14, 3030 (1996); doi:10.1116/1.589059
Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:29213
Collection:CaltechAUTHORS
Deposited By: Ruth Sustaita
Deposited On:09 Feb 2012 16:36
Last Modified:26 Dec 2012 14:49

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