Shcheglov, K. V. and Yang, C. M. and Vahala, K. J. and Atwater, Harry A. (1995) Electroluminescence and photoluminescence of Ge-implanted Si/SiO_2/Si structures. Applied Physics Letters, 66 (6). pp. 745-747. ISSN 0003-6951. http://resolver.caltech.edu/CaltechAUTHORS:20120215-093505302
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Electroluminescent devices were fabricated in SiO_2 films containing Ge nanocrystals formed by ion implantation and precipitation during annealing at 900 °C, and the visible room‐temperature electroluminescence and photoluminescence spectra were found to be broadly similar. The electroluminescent devices have an onset for emission in reverse bias of approximately −10 V, suggesting that the mechanism for carrier excitation may be an avalanche breakdown caused by injection of hot carriers into the oxide. The electroluminescent emission was stable for periods exceeding 6 h.
|Additional Information:||© 1995 American Institute of Physics. Received 28 June 1994; accepted for publication 30 November 1994. This work was supported by the U.S. Department of Energy under Grant DE-FG03-89ER45395. One of us (K.V.S.) acknowledges support from a J.S. Fluor Foundation Fellowship.|
|Classification Code:||PACS: 85.60.Jb; 78.60.Fi; 78.66.Sq|
|Usage Policy:||No commercial reproduction, distribution, display or performance rights in this work are provided.|
|Deposited By:||Tony Diaz|
|Deposited On:||21 Mar 2012 20:27|
|Last Modified:||26 Dec 2012 14:50|
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