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A 100-Element MODFET Grid Amplifier

DeLisio, Michael P. and Liu, Cheh-Ming and Moussessian, Alina and Rutledge, David B. and Rosenberg, James J. (1995) A 100-Element MODFET Grid Amplifier. In: 1995 Digest IEEE Antennas and Propagation Society International Symposium. IEEE , Piscataway, NJ, pp. 1304-1307. ISBN 0-7803-2719-5

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A 100-element quasi-optical amplifier is presented. The active devices are custom-fabricated modulation-doped field-effect transistors (MODFETs). Common-mode oscillations were suppressed using resistors in the input gate leads. The grid has 9 dB of gain at 10.1 GHz. The 3-dB bandwidth is 1.2 GHz. We present a model for the gain of the grid versus frequency and compare measurement with theory.

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Additional Information:© 1995 IEEE. Date of Current Version: 06 August 2002. This research was supported by the Army Research Office and a grant from Martin Marietta Laboratories. M.P. DeLisio holds an NSF fellowship. The authors are grateful to Martin Marietta Laboratories for supplying the differential-pair chips. Furthermore, we would like to thank Dr. S. Weinreb, Dr. S. Duncan, and Dr. N. Byer of Martin Marietta Laboratories for their suggestions and support.
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Army Research Office (ARO)UNSPECIFIED
Martin Marietta LaboratoriesUNSPECIFIED
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INSPEC Accession Number5188810
Record Number:CaltechAUTHORS:20120217-100159654
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Official Citation:De Lisio, M.P.; Cheh-Ming Liu; Moussessian, A.; Rutledge, D.B.; Rosenberg, J.J.; , "A 100-element MODFET grid amplifier," Antennas and Propagation Society International Symposium, 1995. AP-S. Digest , vol.2, no., pp.1304-1307 vol.2, 18-23 Jun 1995 doi: 10.1109/APS.1995.530259 URL:
Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:29356
Deposited By: Ruth Sustaita
Deposited On:17 Feb 2012 18:44
Last Modified:26 Dec 2012 14:51

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