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Influence of substrate temperature on lattice strain field and phase transition in MeV oxygen ion implanted GaAs crystals

Xiong, Fulin and Tsai, C. J. and Vreeland, T., Jr. and Tombrello, T. A. and Schwartz, C. L. and Schwarz, S. A. (1991) Influence of substrate temperature on lattice strain field and phase transition in MeV oxygen ion implanted GaAs crystals. Journal of Applied Physics, 69 (5). pp. 2964-2969. ISSN 0021-8979. http://resolver.caltech.edu/CaltechAUTHORS:XIOjap91

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Abstract

A detailed study of the influence of substrate temperature on the radiation-induced lattice strain field and crystalline-to-amorphous (c-a) phase transition in MeV oxygen ion implanted GaAs crystals has been made using channeling Rutherford backscattering spectroscopy, secondary ion mass spectrometry, and the x-ray rocking curve technique. A comparison has been made between the cases of room temperature (RT) and low temperature (LT) (about 100 K) implantation. A strong in situ dynamic annealing process is found in RT implantation at a moderate beam current, resulting in a uniform positive strain field in the implanted layer. LT implantation introduces a freeze-in effect which impedes the recombination and diffusion of initial radiation-created lattice damage and defects, and in turn drives more efficiently the c-a transition as well as strain saturation and relaxation. The results are interpreted with a spike damage model in which the defect production process is described in terms of the competition between defect generation by nuclear spikes and defects diffusion and recombination stimulated by electronic spikes. It is also suggested that the excess population of vacancies and their complexes is responsible for lattice spacing expansion in ion-implanted GaAs crystals.


Item Type:Article
Additional Information:Copyright © 1991 American Institute of Physics. Received 27 August 1990; accepted 3 December 1990. This work was supported in part by National Science Foundation (DMR86-15641).
Subject Keywords:GALLIUM ARSENIDES; CRYSTALS; OXYGEN IONS; ION IMPLANTATION; MEV RANGE; RADIATION EFFECTS; SOLID–STATE PHASE TRANSFORMATIONS; AMORPHIZATION; STRAINS; MEDIUM TEMPERATURE; LOW TEMPERATURE; ANNEALING; STRUCTURAL MODELS; THERMAL SPIKES
Record Number:CaltechAUTHORS:XIOjap91
Persistent URL:http://resolver.caltech.edu/CaltechAUTHORS:XIOjap91
Alternative URL:http://dx.doi.org/10.1063/1.348608
Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:2941
Collection:CaltechAUTHORS
Deposited By: Tony Diaz
Deposited On:08 May 2006
Last Modified:26 Dec 2012 08:51

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