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Study of interface asymmetry in InAs–GaSb heterojunctions

Wang, M. W. and Collins, D. A. and McGill, T. C. and Grant, R. W. and Feenstra, R. M. (1995) Study of interface asymmetry in InAs–GaSb heterojunctions. Journal of Vacuum Science and Technology B, 13 (4). pp. 1689-1693. ISSN 1071-1023. http://resolver.caltech.edu/CaltechAUTHORS:20120224-070410762

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Abstract

We present reflection high energy electron diffraction, secondary ion mass spectroscopy, scanning tunneling microscopy and x‐ray photoelectron spectroscopy studies of the abruptness of InAs–GaSb interfaces. We find that the interface abruptness depends on growth order: InAs grown on GaSb is extended, while GaSb grown on InAs is more abrupt. We first present observations of the interfacial asymmetry, including measurements of band alignments as a function of growth order. We then examine more detailed studies of the InAs–GaSb interface to determine the mechanisms causing the extended interface. Our results show that Sb incorporation into the InAs overlayer and As exchange for Sb in the GaSb underlayer are the most likely causes of the interfacial asymmetry.


Item Type:Article
Related URLs:
URLURL TypeDescription
http://dx.doi.org/10.1116/1.587879DOIUNSPECIFIED
http://avspublications.org/jvstb/resource/1/jvtbd9/v13/i4/p1689_s1PublisherUNSPECIFIED
Additional Information:© 1995 American Vacuum Society. Received 8 February 1995; accepted 25 March 1995. This work was supported by the Air Force Office of Scientific Research and the Office of Naval Research under Contract Nos. AFOSR-F49620-93-1-0258 and N00014-93-1-0881, respectively.
Funders:
Funding AgencyGrant Number
Air Force Office of Scientific Research (AFOSR)AFOSR-F49620-93-1-0258
Office of Naval Research (ONR)N00014-93-1-0881
Subject Keywords:Heterojunctions, gallium arsenides, indium antimonides, interface structure, asymmetry, electronic structure asymmetry, electronic structure
Classification Code:PACS: 68.35.Fx; 73.21.-b
Record Number:CaltechAUTHORS:20120224-070410762
Persistent URL:http://resolver.caltech.edu/CaltechAUTHORS:20120224-070410762
Official Citation:Study of interface asymmetry in InAs–GaSb heterojunctions M. W. Wang, D. A. Collins, T. C. McGill, R. W. Grant, and R. M. Feenstra J. Vac. Sci. Technol. B 13, 1689 (1995); http://dx.doi.org/10.1116/1.587879
Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:29446
Collection:CaltechAUTHORS
Deposited By: Ruth Sustaita
Deposited On:24 Feb 2012 15:35
Last Modified:26 Dec 2012 14:52

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