Wang, M. W. and Collins, D. A. and McGill, T. C. and Grant, R. W. and Feenstra, R. M. (1995) Study of interface asymmetry in InAs–GaSb heterojunctions. Journal of Vacuum Science and Technology B, 13 (4). pp. 1689-1693. ISSN 1071-1023 http://resolver.caltech.edu/CaltechAUTHORS:20120224-070410762
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We present reflection high energy electron diffraction, secondary ion mass spectroscopy, scanning tunneling microscopy and x‐ray photoelectron spectroscopy studies of the abruptness of InAs–GaSb interfaces. We find that the interface abruptness depends on growth order: InAs grown on GaSb is extended, while GaSb grown on InAs is more abrupt. We first present observations of the interfacial asymmetry, including measurements of band alignments as a function of growth order. We then examine more detailed studies of the InAs–GaSb interface to determine the mechanisms causing the extended interface. Our results show that Sb incorporation into the InAs overlayer and As exchange for Sb in the GaSb underlayer are the most likely causes of the interfacial asymmetry.
|Additional Information:||© 1995 American Vacuum Society. Received 8 February 1995; accepted 25 March 1995. This work was supported by the Air Force Office of Scientific Research and the Office of Naval Research under Contract Nos. AFOSR-F49620-93-1-0258 and N00014-93-1-0881, respectively.|
|Subject Keywords:||Heterojunctions, gallium arsenides, indium antimonides, interface structure, asymmetry, electronic structure asymmetry, electronic structure|
|Classification Code:||PACS: 68.35.Fx; 73.21.-b|
|Official Citation:||Study of interface asymmetry in InAs–GaSb heterojunctions M. W. Wang, D. A. Collins, T. C. McGill, R. W. Grant, and R. M. Feenstra J. Vac. Sci. Technol. B 13, 1689 (1995); http://dx.doi.org/10.1116/1.587879|
|Usage Policy:||No commercial reproduction, distribution, display or performance rights in this work are provided.|
|Deposited By:||Ruth Sustaita|
|Deposited On:||24 Feb 2012 15:35|
|Last Modified:||26 Dec 2012 14:52|
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