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Reactive ion etching of Ta–Si–N diffusion barriers in CF_(4)+O_(2)

McLane, G. F. and Casas, L. and Reid, J. S. and Kolawa, E. and Nicolet, M.-A. (1994) Reactive ion etching of Ta–Si–N diffusion barriers in CF_(4)+O_(2). Journal of Vacuum Science and Technology B, 12 (4). pp. 2352-2355. ISSN 1071-1023. http://resolver.caltech.edu/CaltechAUTHORS:20120306-151931971

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Abstract

Ta_(36)Si_(14)N_(50) amorphous layers were reactive ion etched in CF_(4)+O_(2) plasmas. The etch depth was determined as a function of gas composition, pressure, and cathode power. Adding small amounts of O_2 to CF_4 increased the etch rates up to approximately 15% O_2 concentration, with etch rates then decreasing with further addition of O_2. Etch rates increased with both pressure and power. Etching proceeded only after an initial delay time which depended upon gas composition and power. The delay is probably caused by a surface native oxide which must be removed before etching can commence. The presence of a surface oxide was observed from Auger electron spectroscopy intensity depth profile measurements and is estimated to be 2 nm thick. Under optimal conditions, the etch rate of Ta_(36)Si_(14)N_(50) is about seven times higher than for SiO_2, thus providing a high degree of selectivity for integrated circuit processing.


Item Type:Article
Related URLs:
URLURL TypeDescription
http://dx.doi.org/10.1116/1.587763DOIUNSPECIFIED
http://link.aip.org/link/doi/10.1116/1.587763PublisherUNSPECIFIED
Additional Information:© 1994 American Vacuum Society. Received 22 February 1994; Accepted 24 May 1994. The authors acknowledge A. Deanni for performing the sample patterning. Financial support for a portion of this work was provided by the Army Research Office.
Funders:
Funding AgencyGrant Number
Army Research Office (ARO)UNSPECIFIED
Subject Keywords:Ternary compounds; depth profiles; tantalum silicides; tantalum nitrides; amorphous state; etching; oxides; auger electron spectroscopy; chemical composition; chemical reactions; integrated circuits
Classification Code:PACS: 81.05.Bx; 85.40.Hp
Record Number:CaltechAUTHORS:20120306-151931971
Persistent URL:http://resolver.caltech.edu/CaltechAUTHORS:20120306-151931971
Official Citation:Reactive ion etching of Ta--Si--N diffusion barriers in CF[sub 4]+O[sub 2] G. F. McLane, L. Casas, J. S. Reid, E. Kolawa, and M.-A. Nicolet, J. Vac. Sci. Technol. B 12, 2352 (1994), DOI:10.1116/1.587763
Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:29603
Collection:CaltechAUTHORS
Deposited By: Jason Perez
Deposited On:13 Mar 2012 20:40
Last Modified:26 Dec 2012 14:55

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