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n-CdSe/p-ZnTe based wide band-gap light emitters: Numerical simulation and design

Wang, M. W. and Phillips, M. C. and Swenberg, J. F. and Yu, E. T. and McCaldin, J. O. and McGill, T. C. (1993) n-CdSe/p-ZnTe based wide band-gap light emitters: Numerical simulation and design. Journal of Applied Physics, 73 (9). pp. 4660-4668. ISSN 0021-8979. http://resolver.caltech.edu/CaltechAUTHORS:20120307-105358808

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Abstract

The only II‐VI/II‐VI wide band‐gap heterojunction to provide both good lattice match and p‐ and n‐type dopability is CdSe/ZnTe. We have carried out numerical simulations of several light emitter designs incorporating CdSe, ZnTe, and Mg alloys. In the simulations, Poisson’s equation is solved in conjunction with the hole and electron current and continuity equations. Radiative and nonradiative recombination in bulk material and at interfaces are included in the model. Simulation results show that an n‐CdSe/p‐ZnTe heterostructure is unfavorable for efficient wide band‐gap light emission due to recombination in the CdSe and at the CdSe/ZnTe interface. An n‐CdSe/Mg_(x)Cd_(1−x)Se/p‐ZnTe heterostructure significantly reduces interfacial recombination and facilitates electron injection into the p‐ZnTe layer. The addition of a Mg_(y)Zn_(1−y)Te electron confining layer further improves the efficiency of light emission. Finally, an n‐CdSe/Mg_(x)Cd_(1−x)Se/Mg_(y)Zn_(1−y)Te/p‐ZnTe design allows tunability of the wavelength of light emission from green into the blue wavelength regime.


Item Type:Article
Related URLs:
URLURL TypeDescription
http://dx.doi.org/10.1063/1.352761DOIUNSPECIFIED
http://jap.aip.org/resource/1/japiau/v73/i9/p4660_s1PublisherUNSPECIFIED
Additional Information:© 1993 American Institute of Physics. Received 13 August 1992; accepted 4 January 1993. The author wishes to thank Y. X. Liu, R. R. Marquardt, and D. Z.-Y. Ting for many useful discussions. One of us (E.T. Yu) would like to acknowledge financial support from the AT&T Foundation. This work was supported by the Office of Naval Research under Grant No. N00014-90-J-1742.
Funders:
Funding AgencyGrant Number
AT&T FoundationUNSPECIFIED
Office of Naval Research (ONR)N00014-90-J-1742
Classification Code:PACS: 85.60.Jb; 78.66.Hf
Record Number:CaltechAUTHORS:20120307-105358808
Persistent URL:http://resolver.caltech.edu/CaltechAUTHORS:20120307-105358808
Official Citation:n-CdSe/p-ZnTe based wide band-gap light emitters: Numerical simulation and design M. W. Wang, M. C. Phillips, J. F. Swenberg, E. T. Yu, J. O. McCaldin, and T. C. McGill, J. Appl. Phys. 73, 4660 (1993), DOI:10.1063/1.352761
Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:29617
Collection:CaltechAUTHORS
Deposited By: Jason Perez
Deposited On:12 Mar 2012 22:42
Last Modified:26 Dec 2012 14:55

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