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X-ray photoelectron spectroscopy investigation of the mixed anion GaSb/InAs heterointerface

Wang, M. W. and Collins, D. A. and McGill, T. C. and Grant, R. W. (1993) X-ray photoelectron spectroscopy investigation of the mixed anion GaSb/InAs heterointerface. Journal of Vacuum Science and Technology B, 11 (4). pp. 1418-1422. ISSN 1071-1023. http://resolver.caltech.edu/CaltechAUTHORS:20120308-070903192

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Abstract

X-ray photoelectron spectroscopy has been used to measure levels of anion cross-incorporation and to study interface formation for the mixed anion GaSb/lnAs heterojunction. Anion cross-incorporation was measured in 20 Å thick GaSb layers grown on lnAs, and 20 Å thick InAs layers grown on GaSb for cracked and uncracked sources. It was found that significantly less anion cross-incorporation occurs in structures grown with cracked sources. Interface formation was investigated by studying Sb soaks of InAs surfaces and As soaks of GaSb surfaces as a function of cracker power and soak time. Exchange of the group V surface atoms was found to be an increasing function of both cracker power and soak time. We find that further optimization of current growth parameters may be possible by modifying the soak time used at interfaces.


Item Type:Article
Related URLs:
URLURL TypeDescription
http://dx.doi.org/10.1116/1.586952DOIUNSPECIFIED
http://avspublications.org/jvstb/resource/1/jvtbd9/v11/i4/p1418_s1PublisherUNSPECIFIED
Additional Information:© 1993 American Vacuum Society. Received 25 January 1993; accepted 24 March 1993. The authors gratefully acknowledge helpful discussions with D. H. Chow. This work was supported in part by the Office of Naval Research under Contract Nos. N00014-90-J-1742 and N00014-89-C-0203, and the Air Force Office of Scientific Research under Contract No. AFOSR-90-0239.
Funders:
Funding AgencyGrant Number
Office of Naval Research (ONR)N00014-90-J-1742
Office of Naval Research (ONR)N00014-89-C-0203
Air Force Office of Scientific Research (AFOSR)AFOSR-90-0239
Classification Code:PACS: 81.15.Hi, 73.20.At
Record Number:CaltechAUTHORS:20120308-070903192
Persistent URL:http://resolver.caltech.edu/CaltechAUTHORS:20120308-070903192
Official Citation:X‐ray photoelectron spectroscopy investigation of the mixed anion GaSb/InAs heterointerface M. W. Wang, D. A. Collins, T. C. McGill, and R. W. Grant J. Vac. Sci. Technol. B 11, 1418 (1993); http://dx.doi.org/10.1116/1.586952
Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:29640
Collection:CaltechAUTHORS
Deposited By: Ruth Sustaita
Deposited On:12 Mar 2012 21:20
Last Modified:26 Dec 2012 14:55

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