Li, H. S. and Chen, Y. W. and Wang, K. L. and Lie, D. Y. C. (1993) Intersubband transitions in pseudomorphic InGaAs/GaAs/AlGaAs multiple step quantum wells. Journal of Vacuum Science and Technology B, 11 (5). pp. 1840-1843. ISSN 1071-1023. http://resolver.caltech.edu/CaltechAUTHORS:20120309-101906798
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Intersubband transitions from the ground state to the first and second excited states in pseudomorphic AlGaAs/InGaAs/GaAs/AlGaAs multiple step quantum wells have been observed. The step well structure has a configuration of two AlGaAs barriers confining an InGaAs/GaAs step. Multiple step wells were grown on GaAs substrate with each InGaAs layer compressively strained. During the growth, a uniform growth condition was adopted so that inconvenient long growth interruptions and fast temperature ramps when switching the materials were eliminated. The sample was examined by cross‐sectional transmission electron microscopy, an x‐ray rocking curve technique, and the results show good crystal quality using this simple growth method. Theoretical calculations were performed to fit the intersubband absorption spectrum. The calculated energies are in good agreement with the observed peak positions for both the 1→2 and 1→3 transitions.
|Additional Information:||© 1993 American Vacuum Society. Received 29 January 1993; accepted 8 July 1993. The authors would like to thank Dr. J. M. Tijero for helping the PL mesurements, and Dr. T. W. Kang for providing the TEM data. This work was, in part, supported by DARPA through NCIPT, and by Joint Services Electronics Program.|
|Classification Code:||PACS: 73.21.-b|
|Official Citation:||Intersubband transitions in pseudomorphic InGaAs/GaAs/AlGaAs multiple step quantum wells H. S. Li, Y. W. Chen, K. L. Wang, and D. Y. C. Lie J. Vac. Sci. Technol. B 11, 1840 (1993); http://dx.doi.org/10.1116/1.586487|
|Usage Policy:||No commercial reproduction, distribution, display or performance rights in this work are provided.|
|Deposited By:||Ruth Sustaita|
|Deposited On:||12 Mar 2012 15:37|
|Last Modified:||26 Dec 2012 14:56|
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