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Reflection high-energy electron diffraction studies of the growth of lnAs/Ga_(1-x)In_xSb strained-layer superlattices

Collins, D. A. and Fu, T. C. and McGill, T. C. and Chow, D. H. (1992) Reflection high-energy electron diffraction studies of the growth of lnAs/Ga_(1-x)In_xSb strained-layer superlattices. Journal of Vacuum Science and Technology B, 10 (4). pp. 1779-1783. ISSN 1071-1023. http://resolver.caltech.edu/CaltechAUTHORS:20120316-101012482

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Abstract

We have used reflection high‐energy electron diffraction to study the surface periodicity of the growth front of InAs/GaInSb strained‐layer superlattices (SLSs). We found that the apparent surface lattice spacing reproducibly changed during layers which subsequent x‐ray measurements indicated were coherently strained. Abrupt changes in the measured streak spacings were found to be correlated to changes in the growth flux. The profile of the dynamic streak spacing was found to be reproducible when comparing consecutive periods of a SLSs or different SLSs employing the same shuttering scheme at the InAs/GaInSb interface. Finally, when the interface shuttering scheme was changed, it was found that the dynamic streak separation profile also changed. Large changes in the shuttering scheme led to dramatic differences in the streak separation profile, and small changes in the shuttering scheme led to minor changes in the profile. In both cases, the differences in the surface periodicity profile occurred during the parts of the growth where the incident fluxes differed.


Item Type:Article
Related URLs:
URLURL TypeDescription
http://dx.doi.org/10.1116/1.586240DOIUNSPECIFIED
http://avspublications.org/jvstb/resource/1/jvtbd9/v10/i4/p1779_s1PublisherUNSPECIFIED
Additional Information:© 1992 American Vacuum Society. Received 7 February 1992. Accepted 27 February 1992. The authors would like to acknowledge the technical assistance of L. D. Warren and helpful discussions with R. R. Marquardt, R. H. Miles, J. F. Swenberg, and D. Z.-Y. Ting concerning the subtleties of electron diffraction. One of us (T. C. F.) was supported in part by Cal tech's Summer Undergraduate Research Fellowship. This work was supported in part by the Office of Naval Research under Contract Nos. N00014-90-J-1742 and N00014-89-C-0203, and the Air Force Office of Scientific Research under Contract No. AFOSR-90-0239.
Funders:
Funding AgencyGrant Number
Office of Naval Research (ONR)N00014-90-J-1742
Office of Naval Research (ONR)N00014-89-C-0203
Air Force Office of Scientific Research (AFOSR)AFOSR-90-0239
Subject Keywords:SUPERLATTICES, INTERNAL STRAINS, BINARY COMPOUNDS, TERNARY COMPOUNDS, INDIUM ARSENIDES, INDIUM ANTIMONIDES, GALLIUM ANTIMONIDES, MOLECULAR BEAM EPITAXY, RHEED, FILM GROWTH
Classification Code:PACS: 68.65.-k, 61.05.jh
Record Number:CaltechAUTHORS:20120316-101012482
Persistent URL:http://resolver.caltech.edu/CaltechAUTHORS:20120316-101012482
Official Citation:Reflection high‐energy electron diffraction studies of the growth of InAs/Ga1−xInxSb strained‐layer superlattices D. A. Collins, T. C. Fu, T. C. McGill, and D. H. Chow J. Vac. Sci. Technol. B 10, 1779 (1992); http://dx.doi.org/10.1116/1.586240
Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:29746
Collection:CaltechAUTHORS
Deposited By: Ruth Sustaita
Deposited On:16 Mar 2012 19:58
Last Modified:26 Dec 2012 14:57

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