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Electric‐field dependence of interband transitions in In_(0.53)Ga_(0.47)As/In_(0.52)Al_(0.48)As single quantum wells by room‐temperature electrotransmittance

Dimoulas, A. and Giapis, K. P. and Leng, J. and Halkias, G. and Zekentes, K. and Christou, A. (1992) Electric‐field dependence of interband transitions in In_(0.53)Ga_(0.47)As/In_(0.52)Al_(0.48)As single quantum wells by room‐temperature electrotransmittance. Journal of Applied Physics, 72 (5). pp. 1912-1917. ISSN 0021-8979. http://resolver.caltech.edu/CaltechAUTHORS:20120329-070358039

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Abstract

Room‐temperature electrotransmittance has been used in order to investigate the interband excitonic transitions in a 250‐Å‐thick In_(0.53)Ga_(0.47)As/In_(0.52)Al_(0.48)As single‐quantum‐well system as a function of an externally applied electric field. Parity forbidden transitions, involving conduction‐band states with quantum numbers up to n=5, which become more pronounced at high electric fields were observed. The ground‐state and the forbidden transitions showed a significant red shift due to the quantum confined Stark effect. A comparison with previously reported results on thinner InGaAs/InAlAs quantum wells indicated that the wide‐well sample exhibits the largest shift, as expected from theory. Despite the appreciable Stark shift, the rather large, field‐induced linewidth broadening and the relatively low electric field at which the ground‐state exciton is ionized poses limitations on using this wide‐quantum‐well system for electro‐optic applications.


Item Type:Article
Related URLs:
URLURL TypeDescription
http://dx.doi.org/10.1063/1.351666DOIUNSPECIFIED
http://jap.aip.org/resource/1/japiau/v72/i5/p1912_s1PublisherUNSPECIFIED
Additional Information:© 1992 American Institute of Physics. Received 3 January 1992; accepted for publication 13 May 1992. This work was supported by the European Economics Communities program ESPRIT 3086 for Basic Research.
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Funding AgencyGrant Number
European Economics Communities program ESPRIT 3086
Subject Keywords:QUANTUM WELLS, INDIUM ARSENIDES, GALLIUM ARSENIDES, ALUMINIUM ARSENIDES, INTERBAND TRANSITIONS, TERNARY COMPOUNDS, AMBIENT TEMPERATURE, STARK EFFECT, LINE BROADENING
Classification Code:PACS: 73.21.-b; 78.66.Fd; 78.66.Hf
Record Number:CaltechAUTHORS:20120329-070358039
Persistent URL:http://resolver.caltech.edu/CaltechAUTHORS:20120329-070358039
Official Citation:Electric‐field dependence of interband transitions in In0.53Ga0.47As/In0.52Al0.48As single quantum wells by room‐temperature electrotransmittance A. Dimoulas, K. P. Giapis, J. Leng, G. Halkias, K. Zekentes, and A. Christou J. Appl. Phys. 72, 1912 (1992); http://dx.doi.org/10.1063/1.351666
Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:29890
Collection:CaltechAUTHORS
Deposited By: Ruth Sustaita
Deposited On:29 Mar 2012 14:29
Last Modified:26 Dec 2012 15:00

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