Kim, Kyu Sang and Suh, Myoung Gyun and Cho, S. N. (2012) Nanometer sized Ni-dot/Ag/Pt structure for high reflectance of p-type contact metal in InGaN light emitting diodes. Applied Physics Letters, 100 (6). Art. No. 061113 . ISSN 0003-6951 http://resolver.caltech.edu/CaltechAUTHORS:20120402-111121112
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The Ni-dot/Ag/Pt layer, where Ni-dot layer is formed of nanometer sized Ni dots, has been used to improve the reflectivity from the surface of p-type GaN in a light emitting diode (LED). Comparing with Ni/Ag/Pt layer, where Ni layer is a thin film, the Ni-dot/Ag/Pt structure shows significantly improved reflectivity with stable contact resistivity. The optical output power and external quantum efficiency of InGaN LEDs with Ni-dot/Ag/Pt structure for p-metal have improved by 28% and 29%, respectively, over the results of Ni/Ag/Pt structure.
|Additional Information:||© 2012 American Institute of Physics. Received 13 October 2011; accepted 24 January 2012; published online 9 February 2012. This research was supported by Sangji University Research Fund, 2011.|
|Subject Keywords:||contact resistance, electrical resistivity, gallium compounds, III-V semiconductors, indium compounds, light emitting diodes, nanostructured materials, nickel, platinum, reflectivity, semiconductor-metal boundaries, silver, wide band gap semiconductors|
|Classification Code:||PACS: 85.60.Jb; 73.40.Ns|
|Usage Policy:||No commercial reproduction, distribution, display or performance rights in this work are provided.|
|Deposited By:||Tony Diaz|
|Deposited On:||11 Apr 2012 20:52|
|Last Modified:||26 Dec 2012 15:01|
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