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Highly Reversible Lithium Storage in Nanostructured Silicon

Graetz, J. and Ahn, C. C. and Yazami, R. and Fultz, B. (2003) Highly Reversible Lithium Storage in Nanostructured Silicon. Electrochemical and Solid-State Letters, 6 (9). A194-A197. ISSN 1099-0062. http://resolver.caltech.edu/CaltechAUTHORS:GRAessl03

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Abstract

Anode materials of nanostructured silicon have been prepared by physical vapor deposition and characterized using electrochemical methods. The electrodes were prepared in thin-film form as nanocrystalline particles (12 nm mean diameter) and as continuous amorphous thin films (100 nm thick). The nanocrystalline silicon exhibited specific capacities of around 1100 mAh/g with a 50% capacity retention after 50 cycles. The amorphous thin-film electrodes exhibited initial capacities of 3500 mAh/g with a stable capacity of 2000 mAh/g over 50 cycles. We suggest that the nanoscale dimensions of the silicon circumvents conventional mechanisms of mechanical deterioration, permitting good cycle life.


Item Type:Article
Additional Information:© 2003 The Electrochemical Society. Submitted: February 7, 2003; revised: April 19, 2003. Available electronically July 3, 2003. This work was supported by the Department of Energy through Basic Energy Sciences grant no. DE-FG03-00ER15035. We thank Crane & Co., Inc. for providing the fiberglass used as a separator in the electrochemical cells. California Institute of Technology assisted in meeting the publication costs of this article.
Subject Keywords:nanostructured materials; silicon; materials preparation; vapour deposition; electrochemical electrodes; micromechanics; energy storage
Record Number:CaltechAUTHORS:GRAessl03
Persistent URL:http://resolver.caltech.edu/CaltechAUTHORS:GRAessl03
Alternative URL:http://dx.doi.org/10.1149/1.1596917
Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:3002
Collection:CaltechAUTHORS
Deposited By: Archive Administrator
Deposited On:10 May 2006
Last Modified:26 Dec 2012 08:52

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