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On the Origin of Charging Damage during Etching of Antenna Structures

Hwang, Gyeong S. and Giapis, Konstantinos P. (1997) On the Origin of Charging Damage during Etching of Antenna Structures. Journal of the Electrochemical Society, 144 (10). L285-L287. ISSN 0013-4651.

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Monte Carlo simulations of charging and profile evolution in patterned antenna structures during etching in high-density plasmas reveal a rapid change in the potential of the lines at end point, which causes a surge in electron tunneling through thin gate oxides and possibly charging damage. The condition of the substrate (grounded vs. floating) determines the magnitude of the surge and whether it will be followed by a steady-state current until all lines of the pattern become disconnected. A reduction in damage is possible by controlling the substrate condition, which may be assessed through notching experiments.

Item Type:Article
Additional Information:©1997 The Electrochemical Society, Inc. Manuscript received July 15, 1997. This work was supported by an NSF-Career Award and a Camille Dreyfus Teacher-Scholar Award to K.P.G. An Applied Materials Scholarship in partial support of G.S.H. is gratefully acknowledged. California Institute of Technology assisted in meeting the publication costs of this article.
Subject Keywords:etching; antenna testing; antennas in plasma; tunnelling; plasma applications
Record Number:CaltechAUTHORS:HWAjes97a
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Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:3003
Deposited By: Archive Administrator
Deposited On:10 May 2006
Last Modified:26 Dec 2012 08:52

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