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Narrow conducting channels defined by helium ion beam damage

Cheeks, T. L. and Roukes, M. L. and Scherer, A. and Craighead, H. G. (1988) Narrow conducting channels defined by helium ion beam damage. Applied Physics Letters, 53 (20). 1964 -1966. ISSN 0003-6951. http://resolver.caltech.edu/CaltechAUTHORS:CHEapl88

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Abstract

We have developed a new technique for patterning narrow conducting channels in GaAs-AlGaAs two-dimensional electron gas (2DEG) materials. A low-energy He ion beam successfully patterned narrow wires with little or no etching of the thin GaAs cap. The damage propagation of the He ion even at low energies was sufficient to decrease the mobility of the 2DEG located deep within the structure. The damage can be removed by a low-temperature anneal but remains stable at room temperature. Conducting channels as narrow as 300 nm have been fabricated and measured using low-temperature magnetoresistance.


Item Type:Article
Additional Information:Copyright © 1991 American Institute of Physics. Received 11 July 1988; accepted 15 September 1988.
Subject Keywords:ION CHANNELING; DAMAGE; PHYSICAL RADIATION EFFECTS; GALLIUM ARSENIDES; ETCHING; THIN FILMS; MAGNETORESISTANCE; HELIUM IONS
Record Number:CaltechAUTHORS:CHEapl88
Persistent URL:http://resolver.caltech.edu/CaltechAUTHORS:CHEapl88
Alternative URL:http://dx.doi.org/10.1063/1.100337
Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:3018
Collection:CaltechAUTHORS
Deposited By: Tony Diaz
Deposited On:11 May 2006
Last Modified:26 Dec 2012 08:52

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