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Intensity and frequency noise in semiconductor lasers

Vahala, Kerry J. (1991) Intensity and frequency noise in semiconductor lasers. In: Proceedings of the 1991 45th Annual Symposium on Frequency Control. IEEE , Piscataway, NJ, p. 539. ISBN 0-87942-658-6

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Summary form only given. The author reviewed the physics governing field fluctuations in semiconductor lasers, discussed the performance levels that have been achieved in state-of-the-art devices, and tried to forecast future performance levels and novel structures/materials that may be used in these devices. Commercial semiconductor lasers are nearly ideal in terms of their physical properties. Their intensity noise spectra and short-term frequency stability are governed almost exclusively by quantum mechanical effects, and these, in turn, determine system performance levels.

Item Type:Book Section
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Additional Information:© 1991 IEEE. Date of Current Version: 06 August 2002.
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INSPEC Accession Number 4155477
Record Number:CaltechAUTHORS:20120424-114334978
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Official Citation:Vahala, K.J.; , "Intensity and frequency noise in semiconductor lasers," Frequency Control, 1991., Proceedings of the 45th Annual Symposium on , vol., no., pp.539, 29-31 May 1991 doi: 10.1109/FREQ.1991.145947 URL:
Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:30285
Deposited By: Ruth Sustaita
Deposited On:24 Apr 2012 20:28
Last Modified:26 Dec 2012 15:06

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