Woodward, T. K. and McGill, T. C. and Burnham, R. D. (1986) Electrical behavior of GaAs–AlAs heterostructures. Journal of Vacuum Science and Technology B, 4 (4). pp. 1022-1027. ISSN 1071-1023 http://resolver.caltech.edu/CaltechAUTHORS:WOOjvstb86
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We report an experimental study of the electrical behavior of GaAs–AlAs–GaAs heterostructures grown by metal–organic chemical vapor deposition. The structures consisted of a layer of AlAs several thousand angstroms thick sandwiched between layers of GaAs which were a few microns thick. The top layer of GaAs was doped degenerately n-type with Se, while the bottom layer was nondegenerately doped. Capacitance–voltage (C–V) and curent–voltage (I–V) curves were obtained as a function of temperature, illumination, and rate of data acquisition. Deep-level transient spectroscopy (DLTS) measurements were also made. The C–V showed hysteresis near zero bias with the capacitance being larger when the voltage was swept from reverse to forward bias in the dark. The C–V displayed a light sensitive peak near zero bias. With illumination, the capacitance was greater, and no hysteresis was observed. We explain these phenomena as being due to deep levels near the AlAs–GaAs interface; DLTS has confirmed this. I–V curves taken in darkness also showed hysteresis. We take this as further evidence of deep levels. Additionally, capacitance failed to level off in reverse bias, indicating a lack of inversion in the samples.
|Additional Information:||© 1986 American Vacuum Society (Received 5 March 1986; accepted 27 March 1986) We would like to acknowledge A. R. Bonnefoi, D. H. Chow, R. J. Hauenstein, R. S. Bauer, T. L. Palio and F. A. Ponce for valuable discussions. We would also like to acknowledge the technical assistance of H. Chung, F. Endicott, D. Taylor, T. T. Tjoe, M. Berstein, W. Mosby, T. Anderson, and J. Tramontana. One of us (T.K.W.) is grateful to acknowledge I.B.M. for financial support. Parts of this work were supported by DARPA under Contract No. N00014-84C-0083.|
|Subject Keywords:||DLTS; HETEROSTRUCTURES; ALUMINIUM ARSENIDES; GALLIUM ARSENIDES; ELECTRICAL PROPERTIES; IV CHARACTERISTIC; CV CHARACTERISTIC; HYSTERESIS; INTERFACE STATES; CHEMICAL VAPOR DEPOSITION|
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|Deposited On:||12 May 2006|
|Last Modified:||26 Dec 2012 08:52|
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