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Variable-level Cells for Nonvolatile Memories

Jiang, Anxiao (Andrew) and Zhou, Hongchao and Bruck, Jehoshua (2011) Variable-level Cells for Nonvolatile Memories. California Institute of Technology , Pasadena, CA. (Unpublished) http://resolver.caltech.edu/CaltechAUTHORS:20120502-125850834

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Abstract

For many nonvolatile memories, – including flash memories, phase-change memories, etc., – maximizing the storage capacity is a key challenge. The existing method is to use multilevel cells (MLC) of more and more levels. The number of levels supported by MLC is seriously constrained by the worst-case performance of cell-programming noise and cell heterogeneity. In this paper, we present variable-level cells (VLC), a new scheme for maximum storage capacity. It adaptively chooses the number of levels and the placement of the levels based on the actual programming performance. We derive its storage capacity, and present an optimal data representation scheme. We also study rewriting schemes for VLC, and present inner and outer bounds to its capacity region.


Item Type:Report or Paper (Technical Report)
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http://www.paradise.caltech.edu/papers/etr113.pdfAuthorUNSPECIFIED
Group:Parallel and Distributed Systems Group
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Paradise ETR113
Record Number:CaltechAUTHORS:20120502-125850834
Persistent URL:http://resolver.caltech.edu/CaltechAUTHORS:20120502-125850834
Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:31272
Collection:CaltechPARADISE
Deposited By: George Porter
Deposited On:02 May 2012 22:36
Last Modified:26 Dec 2012 15:09

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