CaltechAUTHORS
  A Caltech Library Service

Patterned Cells for Phase Change Memories

Jiang, Anxiao (Andrew) and Zhou, Hongchao and Wang, Zhiying and Bruck, Jehoshua (2011) Patterned Cells for Phase Change Memories. California Institute of Technology , Pasadena, CA. (Unpublished) http://resolver.caltech.edu/CaltechAUTHORS:20120502-130441311

[img]
Preview
PDF
See Usage Policy.

183Kb

Use this Persistent URL to link to this item: http://resolver.caltech.edu/CaltechAUTHORS:20120502-130441311

Abstract

Phase-change memory (PCM) is an emerging nonvolatile memory technology that promises very high performance. It currently uses discrete cell levels to represent data, controlled by a single amorphous/crystalline domain in a cell. To improve data density, more levels per cell are needed. There exist a number of challenges, including cell programming noise, drifting of cell levels, and the high power requirement for cell programming. In this paper, we present a new cell structure called patterned cell, and explore its data representation schemes. Multiple domains per cell are used, and their connectivity is used to store data. We analyze its storage capacity, and study its error-correction capability and the construction of error-control codes.


Item Type:Report or Paper (Technical Report)
Related URLs:
URLURL TypeDescription
http://www.paradise.caltech.edu/papers/etr114.pdfAuthorUNSPECIFIED
Group:Parallel and Distributed Systems Group
Other Numbering System:
Other Numbering System NameOther Numbering System ID
ParadiseETR114
Record Number:CaltechAUTHORS:20120502-130441311
Persistent URL:http://resolver.caltech.edu/CaltechAUTHORS:20120502-130441311
Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:31274
Collection:CaltechPARADISE
Deposited By: George Porter
Deposited On:02 May 2012 22:38
Last Modified:26 Dec 2012 15:09

Repository Staff Only: item control page