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Patterned Cells for Phase Change Memories

Jiang, Anxiao (Andrew) and Zhou, Hongchao and Wang, Zhiying and Bruck, Jehoshua (2011) Patterned Cells for Phase Change Memories. California Institute of Technology , Pasadena, CA. (Unpublished)

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Phase-change memory (PCM) is an emerging nonvolatile memory technology that promises very high performance. It currently uses discrete cell levels to represent data, controlled by a single amorphous/crystalline domain in a cell. To improve data density, more levels per cell are needed. There exist a number of challenges, including cell programming noise, drifting of cell levels, and the high power requirement for cell programming. In this paper, we present a new cell structure called patterned cell, and explore its data representation schemes. Multiple domains per cell are used, and their connectivity is used to store data. We analyze its storage capacity, and study its error-correction capability and the construction of error-control codes.

Item Type:Report or Paper (Technical Report)
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Group:Parallel and Distributed Systems Group
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Record Number:CaltechAUTHORS:20120502-130441311
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Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:31274
Deposited By: George Porter
Deposited On:02 May 2012 22:38
Last Modified:26 Dec 2012 15:09

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