Kolawa, E. and Molarius, J. M. and Nieh, C. W. and Nicolet, M.-A. (1990) Amorphous Ta–Si–N thin‐film alloys as diffusion barrier in Al/Si metallizations. Journal of Vacuum Science and Technology A, 8 (3). pp. 3006-3010. ISSN 0734-2101. http://resolver.caltech.edu/CaltechAUTHORS:20120508-142551386
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Amorphous Ta–Si–N thin films of a wide range of compositions were prepared by rf reactive sputtering of a Ta_5Si_3 target in a N_2/Ar plasma. The relationship between films’ composition and resistivity is reported. All obtained films were tested as diffusion barriers between Al and Si. Backscattering spectrometry combined with cross‐sectional transmission electron microscopy were used to determine the barrier effectiveness. It was found that aluminum can be melted on top of the Si/Ta–Si–N structure (675 °C for 30 min) without any evidence of metallurgical interactions between the layers.
|Additional Information:||© 1990 American Vacuum Society. Received 26 October 1989; accepted 18 December 1989. We thank Rob Gorris and Bart Stevens for technical assistance and Cori Bisquera for help in manuscript preparation. The financial support for this work was provided by the U.S. Army Research Office under Contract No. DAAL03-89-K- 0049 and by the National Science Foundation under Grant No. DMR 88-11795. A grant by the Intel Corporation is also gratefully acknowledged.|
|Subject Keywords:||AMORPHOUS STATE, METALLIZATION, TANTALUM ALLOYS, SILICON ALLOYS, NITROGEN ADDITIONS, SPUTTERING, ELECTRIC CONDUCTIVITY, BARRIER HEIGHT, METALLURGICAL EFFECTS, TRANSMISSION ELECTRON MICROSCOPY, TERNARY ALLOYS, NITROGEN, FABRICATION|
|Classification Code:||PACS: 81.05.Bx; 81.15.Cd|
|Usage Policy:||No commercial reproduction, distribution, display or performance rights in this work are provided.|
|Deposited By:||Tony Diaz|
|Deposited On:||08 May 2012 23:11|
|Last Modified:||26 Dec 2012 15:10|
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