CaltechAUTHORS
  A Caltech Library Service

Process parameter-growth environment-film property relationships for the sputter deposited yttrium-oxygen system

Kwok, Chee-Kin and Aita, Carolyn Rubin and Kolawa, Elzbieta (1990) Process parameter-growth environment-film property relationships for the sputter deposited yttrium-oxygen system. Journal of Vacuum Science and Technology A, 8 (3). pp. 1330-1334. ISSN 0734-2101. http://resolver.caltech.edu/CaltechAUTHORS:20120509-111222203

[img]
Preview
PDF - Published Version
See Usage Policy.

451Kb

Use this Persistent URL to link to this item: http://resolver.caltech.edu/CaltechAUTHORS:20120509-111222203

Abstract

In this study, a Y target was sputtered in radio frequency (rf)‐excited, rare gas discharges (Ne, Ar) containing 0%–40% O_2, operated at cathode voltage from −1.0 to −1.7 kV. In situ optical emission spectrometry was used to monitor two neutral excited Y atom transitions (λ=0.6191, 0.6793 μm) and an excited O atom transition (λ=0.7774 μm) as a function of changing process parameter. Films were grown on fused SiO_2 substrates, and their crystallography, optical behavior, and electrical resistivity was determined. A "phase diagram" for Y–O not grown under conditions of equilibrium thermodynamics was constructed, and included hexagonal Y, cubic Y_2O_3, and Y and Y_2O_3 that had no long range crystallographic order. Two direct optical transitions across the energy band gap of cubic Y_2O_3, at 5.07 and 5.73 eV, were identified. Combining discharge diagnostics, growth rate, and film property results, it was concluded that Y_2O_3 was formed at the substrate concurrent with the complete oxidation of the target surface. Even after target oxidation, the discharge contained atomic Y. On the basis of fundamental optical absorption edge characteristics, cubic Y_2O_3 that more closely resembled the bulk material was obtained when the Y‐oxide molecule/Y atom flux to the substrate was high.


Item Type:Article
Related URLs:
URLURL TypeDescription
http://dx.doi.org/10.1116/1.576876DOIUNSPECIFIED
http://avspublications.org/jvsta/resource/1/jvtad6/v8/i3/p1330_s1PublisherUNSPECIFIED
Additional Information:© 1990 American Vacuum Society. Received 31 October 1989; accepted 6 November 1989. This work was supported under US ARO Grant No. DAAL03-89-K-0022 and through a gift by Johnson Controls, Inc. to the Wisconsin Distinguished Professorship of CRA.
Funders:
Funding AgencyGrant Number
Army Research Office (ARO)DAAL03-89-K-0022
Johnson Controls Inc.UNSPECIFIED
Subject Keywords:FILM GROWTH, BAND STRUCTURE, CATHODE SPUTTERING, EMISSION SPECTROSCOPY, YTTRIUM, OXYGEN, HIGH−FREQUENCY DISCHARGES, ELECTRIC CONDUCTIVITY, CRYSTAL STRUCTURE, THIN FILMS, ENERGY−LEVEL TRANSITIONS
Classification Code:PACS: 81.15.Cd, 73.61.At
Record Number:CaltechAUTHORS:20120509-111222203
Persistent URL:http://resolver.caltech.edu/CaltechAUTHORS:20120509-111222203
Official Citation:Process parameter‐growth environment‐film property relationships for the sputter deposited yttrium–oxygen system Chee‐Kin Kwok, Carolyn Rubin Aita, and Elzbieta Kolawa J. Vac. Sci. Technol. A 8, 1330 (1990); http://dx.doi.org/10.1116/1.576876
Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:31378
Collection:CaltechAUTHORS
Deposited By: Ruth Sustaita
Deposited On:09 May 2012 18:31
Last Modified:26 Dec 2012 15:10

Repository Staff Only: item control page