Mahan, John E. and Geib, Kent M. and Robinson, G. Y. and Bai, G. and Nicolet, M-A. (1991) Reflection high-energy electron diffraction patterns of CrSi_2 films on (111) silicon. Journal of Vacuum Science and Technology B, 9 (1). pp. 64-68. ISSN 1071-1023 http://resolver.caltech.edu/CaltechAUTHORS:20120509-133504606
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Highly oriented films of the semiconducting transition metal silicide, CrSi2, were grown on (111) silicon substrates, with the matching crystallographic faces being CrSi_2(001)/Si(111). Reflection high‐energy electron diffraction (RHEED) yielded symmetric patterns of sharp streaks. The expected streak spacings for different incident RHEED beam directions were calculated from the reciprocal net of the CrSi_2(001) face and shown to match the observed spacings. The predominant azimuthal orientation of the films was thus determined to be CrSi_2〈210〉∥Si〈110〉. This highly desirable heteroepitaxial relationship may be described with a common unit mesh of 51 Å^2 and a mismatch of −0.3%. RHEED also revealed the presence of limited film regions of a competing azimuthal orientation, CrSi_2〈110〉∥Si〈110〉. A new common unit mesh for this competing orientation is suggested; it possesses an area of 612 Å^2 and a mismatch of −1.2%.
|Additional Information:||© 1991 American Vacuum Society. Received 7 August 1990; accepted 22 October 1990. This research was sponsored in part by the National Aeronautics and Space Administration through a Small Business Innovation Research contract with the Colorado Research Development Corporation, and in part by the U. S. Army Research Office and the National Science Foundation through NSF Grant No. ECS-8514842 to Colorado State University. The Caltech portion of the work was supported in part by the National Science Foundation under grant No. DMR-8811795 and by the Semiconductor Research Corporation under contract No. 100-SJ-89. The authors are grateful to Robert G. Long and Menachem Nathan for fruitful discussions of the work.|
|Subject Keywords:||ELECTRON DIFFRACTION, ENERGY DEPENDENCE, CHROMIUM SILICIDES, TRANSITION ELEMENT COMPOUNDS, THIN FILMS, AZIMUTH, NARROW BAND GAP SEMICONDUCTORS, CRYSTAL GROWTH, CRYSTAL ORIENTATION, MONITORING, ULTRAHIGH VACUUM, SILICON, SUBSTRATES, HIGH TEMPERATURE, EPITAXY, EVAPORATION|
|Classification Code:||PACS: 68.55.-a; 61.05.jh|
|Official Citation:||Reflection high‐energy electron diffraction patterns of CrSi2 films on (111) silicon John E. Mahan, Kent M. Geib, G. Y. Robinson, G. Bai, and M‐A. Nicolet J. Vac. Sci. Technol. B 9, 64 (1991); http://dx.doi.org/10.1116/1.585791|
|Usage Policy:||No commercial reproduction, distribution, display or performance rights in this work are provided.|
|Deposited By:||Ruth Sustaita|
|Deposited On:||09 May 2012 22:00|
|Last Modified:||26 Dec 2012 15:10|
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