Vu, Quat T. and Pokela, P. J. and Garden, C. L. and Kolawa, E. and Raud, S. and Nicolet, M. A. (1990) Thermal oxidation of reactively sputtered amorphous W_(80)N_(20) films. Journal of Applied Physics, 68 (12). pp. 6420-6423. ISSN 0021-8979 http://resolver.caltech.edu/CaltechAUTHORS:20120509-153900631
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The oxidation behavior of reactively sputtered amorphous tungsten nitride of composition W_(80)N_(20) was investigated in dry and wet oxidizing ambient in the temperature range of 450 °C–575 °C. A single WO_3 oxide phase is observed. The growth of the oxide follows a parabolic time dependence which is attributed to a process controlled by the diffusivity of the oxidant in the oxide. The oxidation process is thermally activated with an activation energy of 2.5 ± 0.05 eV for dry ambient and 2.35 ± 0.05 eV for wet ambient. The pre‐exponential factor of the reaction constant for dry ambient is 1.1×10^(21) Å^2/min; that for wet ambient is only about 10 times less and is equal to 1.3×10^(20) Å^2/min.
|Additional Information:||© 1990 American Institute of Physics. Received 9 July 1990; accepted for publication 23 August 1990. This work is supported by the U.S. Army Research Office under Contract DAAL03-89-K-0049. In addition, the first author is deeply indebted to Intel Corporation for a personal fellowship.|
|Subject Keywords:||Metallization, Tungsten Nitrides, Oxidation, Sputtering, High temperature, Atom Transport, Activation energy, Thickness|
|Classification Code:||PACS: 81.65.-b; 81.15.Cd; 81.40.Gh; 82.30.Hk|
|Official Citation:||Thermal oxidation of reactively sputtered amorphous W80N20 films Q. T. Vu, P. J. Pokela, C. L. Garden, E. Kolawa, S. Raud, and M‐A. Nicolet J. Appl. Phys. 68, 6420 (1990); http://dx.doi.org/10.1063/1.346863|
|Usage Policy:||No commercial reproduction, distribution, display or performance rights in this work are provided.|
|Deposited By:||Ruth Sustaita|
|Deposited On:||10 May 2012 16:14|
|Last Modified:||26 Dec 2012 15:11|
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