Ward, M. J. and Odeh, F. M. and Cohen, D. S. (1990) Asymptotic Methods for Metal Oxide Semiconductor Field Effect Transistor Modeling. SIAM Journal on Applied Mathematics, 50 (4). pp. 1099-1125. ISSN 0036-1399 http://resolver.caltech.edu/CaltechAUTHORS:20120510-083526681
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The behavior of metal oxide semiconductor field effect transistors (MOSFETs) with small aspect ratio and large doping levels is analyzed using formal perturbation techniques. Specifically, the influence of interface layers in the potential on the averaged channel conductivity is closely examined. The interface and internal layers that occur in the potential are resolved in the limit of large doping using the method of matched asymptotic expansions. This approach, together with other asymptotic techniques, provides both a pointwise description of the state variables as well as lumped current-voltage relations that vary uniformly across the various bias regimes. These current-voltage relations are derived for a variable doping model respresenting a particular class of devices.
|Additional Information:||© 1990 Society for Industrial and Applied Mathematics. Received by the editors September 7, 1988; accepted for publication (in revised form) June 13, 1989. This work was supported by National Science Foundation grant DMS84-00885, United States Army Research Office contract DAAG29-85-K0092, and Air Force Office of Scientific Research grant AFOSR-87-0270. The authors acknowledge preliminary calculations, related to some of the material of § 4, by L. Reyna and H. Cohen.|
|Subject Keywords:||singular perturbation, interface layer, uniform expansions, current-voltage relations, channel conductivity|
|Classification Code:||AMS Subject Headings: 35B25, 35B40, 41A60|
|Usage Policy:||No commercial reproduction, distribution, display or performance rights in this work are provided.|
|Deposited By:||Tony Diaz|
|Deposited On:||10 May 2012 16:09|
|Last Modified:||26 Dec 2012 15:11|
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