Giapis, Konstantinos P. and Lu, Da-Cheng and Jensen, Klavs F. (1989) High quality epitaxial ZnSe and the relationship between electron mobility and photoluminescence characteristics. Applied Physics Letters, 54 (4). pp. 353-355. ISSN 0003-6951. http://resolver.caltech.edu/CaltechAUTHORS:20120517-142642530
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High quality epitaxial layers of nominally undoped ZnSe have been grown by metalorganic chemical vapor deposition at low temperature (325 °C) and pressure (30 Torr), using dimethylzinc and hydrogen selenide. All layers were unintentionally doped n type with net carrier concentrations of 6.4×10^(14)–1.5×10^(16) cm^(−3) and exhibited very high mobility at room temperature (up to 500 cm2/V s) as well as at 77 K, where the measured value of 9250 cm^2/V s is the highest so far reported for vapor phase growth. Additional evidence for the high quality of the material is provided by photoluminescence. Experimental results indicate a correlation between the photoluminescence characteristics and the electrical properties that may be useful in assessing the quality of ZnSe films.
|Additional Information:||© 1989 American Institute of Physics. Received 11 August 1988; accepted for publication 10 November 1988. The authors are grateful to J. E. Potts, H. Cheng, and J. M. DePuydt for discussions and encouragement concerning this project. We also wish to thank G. Haugen for technical assistance with the PL measurements. This work was supported by 3M, NSF (PYI), and the Dreyfus Foundation.|
|Subject Keywords:||Chemical vapor deposition; vacancies; interstitials; impurities; p-n junctions; electron mobility; zinc selenides; epitaxial layers; vapor phase epitaxy; organometallic compounds; photoluminescence; carrier mobility; medium temperature; low temperature; electrical properties|
|Classification Code:||PACS: 73.50.Dn; 73.61.Ga; 78.55.Cr; 81.15.Gh|
|Official Citation:||High quality epitaxial ZnSe and the relationship between electron mobility and photoluminescence characteristics Konstantinos P. Giapis, Da-Cheng Lu, and Klavs F. Jensen, Appl. Phys. Lett. 54, 353 (1989), DOI:10.1063/1.100967|
|Usage Policy:||No commercial reproduction, distribution, display or performance rights in this work are provided.|
|Deposited By:||Jason Perez|
|Deposited On:||18 May 2012 15:06|
|Last Modified:||26 Dec 2012 15:13|
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