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High quality epitaxial ZnSe and the relationship between electron mobility and photoluminescence characteristics

Giapis, Konstantinos P. and Lu, Da-Cheng and Jensen, Klavs F. (1989) High quality epitaxial ZnSe and the relationship between electron mobility and photoluminescence characteristics. Applied Physics Letters, 54 (4). pp. 353-355. ISSN 0003-6951. http://resolver.caltech.edu/CaltechAUTHORS:20120517-142642530

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Abstract

High quality epitaxial layers of nominally undoped ZnSe have been grown by metalorganic chemical vapor deposition at low temperature (325 °C) and pressure (30 Torr), using dimethylzinc and hydrogen selenide. All layers were unintentionally doped n type with net carrier concentrations of 6.4×10^(14)–1.5×10^(16) cm^(−3) and exhibited very high mobility at room temperature (up to 500 cm2/V s) as well as at 77 K, where the measured value of 9250 cm^2/V s is the highest so far reported for vapor phase growth. Additional evidence for the high quality of the material is provided by photoluminescence. Experimental results indicate a correlation between the photoluminescence characteristics and the electrical properties that may be useful in assessing the quality of ZnSe films.


Item Type:Article
Related URLs:
URLURL TypeDescription
http://dx.doi.org/10.1063/1.100967DOIUNSPECIFIED
http://link.aip.org/link/doi/10.1063/1.100967PublisherUNSPECIFIED
Additional Information:© 1989 American Institute of Physics. Received 11 August 1988; accepted for publication 10 November 1988. The authors are grateful to J. E. Potts, H. Cheng, and J. M. DePuydt for discussions and encouragement concerning this project. We also wish to thank G. Haugen for technical assistance with the PL measurements. This work was supported by 3M, NSF (PYI), and the Dreyfus Foundation.
Funders:
Funding AgencyGrant Number
3MUNSPECIFIED
NSF (PYI)UNSPECIFIED
Dreyfus Foundation UNSPECIFIED
Subject Keywords:Chemical vapor deposition; vacancies; interstitials; impurities; p-n junctions; electron mobility; zinc selenides; epitaxial layers; vapor phase epitaxy; organometallic compounds; photoluminescence; carrier mobility; medium temperature; low temperature; electrical properties
Classification Code:PACS: 73.50.Dn; 73.61.Ga; 78.55.Cr; 81.15.Gh
Record Number:CaltechAUTHORS:20120517-142642530
Persistent URL:http://resolver.caltech.edu/CaltechAUTHORS:20120517-142642530
Official Citation:High quality epitaxial ZnSe and the relationship between electron mobility and photoluminescence characteristics Konstantinos P. Giapis, Da-Cheng Lu, and Klavs F. Jensen, Appl. Phys. Lett. 54, 353 (1989), DOI:10.1063/1.100967
Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:31533
Collection:CaltechAUTHORS
Deposited By: Jason Perez
Deposited On:18 May 2012 15:06
Last Modified:26 Dec 2012 15:13

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