Sercel, P. C. and Zarem, H. A. and Lebens, J. A. and Eng, L. E. and Yariv, A. and Vahala, K. J. (1989) A novel technique for the direct determination of carrier diffusion lengths in GaAs/AlGaAs heterostructures using cathodoluminescence. In: 1989 Technical Digest International Electron Devices Meeting. IEEE , Piscataway, NJ, pp. 285-288. ISBN 0-7803-0817-4 http://resolver.caltech.edu/CaltechAUTHORS:20120524-131646424
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A new technique for determining carrier diffusion lengths in direct gap semiconductors by cathodoluminescence measurement is presented. Ambipolar diffusion lengths are determined for GaAs quantum well material, bulk GaAs, and Al_xGa_(1-x)As with x up to 0.38. A large increase in the diffusion length is found as x approaches 0.38 and is attributed to an order of magnitude increase in lifetime.
|Item Type:||Book Section|
|Additional Information:||© 1989 IEEE. Date of Current Version: 06 August 2002. The authors would like to acknowledge the support of the Office of Naval research and the SDIO-ISTC. One of us (P.S.) would like to acknowledge the support of a graduate NSF fellowship.|
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|Official Citation:||Sercel, P.C.; Zarem, H.A.; Lebens, J.A.; Eng, L.E.; Yariv, A.; Vahala, K.J.; , "A novel technique for the direct determination of carrier diffusion lengths in GaAs/AlGaAs heterostructures using cathodoluminescence," Electron Devices Meeting, 1989. IEDM '89. Technical Digest., International , vol., no., pp.285-288, 3-6 Dec 1989 doi: 10.1109/IEDM.1989.74280 URL: http://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=74280&isnumber=2489|
|Usage Policy:||No commercial reproduction, distribution, display or performance rights in this work are provided.|
|Deposited By:||Tony Diaz|
|Deposited On:||24 May 2012 20:55|
|Last Modified:||26 Dec 2012 15:15|
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