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Thermal reaction of Al/Ti bilayers with contaminated interface

Thuillard, M. and Tran, L. T. and Nieh, C. W. and Nicolet, M-A. (1989) Thermal reaction of Al/Ti bilayers with contaminated interface. Journal of Applied Physics, 65 (6). pp. 2553-2556. ISSN 0021-8979. http://resolver.caltech.edu/CaltechAUTHORS:20120530-151638572

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Abstract

We have studied some new aspects of thermal reactions in Al/Ti bilayers in which the interface is purposely contaminated with oxygen. After annealing at a temperature of 460 °C, an Al_3Ti compound forms at the interface, moreover some Al diffuses through the Ti to form a compound at the free surface. The amount of aluminum at the free surface can be as large as at the interface. Nucleation and lateral growth of Al_3Ti at the interface are locally unfavorable. This results in a competition between the lateral growth of Al_3Ti at the Al/Ti interface and the diffusion of Al to the free surface. Once full coverage by Al_3Ti is obtained at the Al/Ti interface, the diffusion of Al to the surface becomes negligible.


Item Type:Article
Related URLs:
URLURL TypeDescription
http://dx.doi.org/10.1063/1.342780DOIUNSPECIFIED
http://jap.aip.org/resource/1/japiau/v65/i6/p2553_s1PublisherUNSPECIFIED
Additional Information:© 1989 American Institute of Physics. Received 23 May 1988; accepted for publication 14 November 1988. Technical assistance from Rob Gorris and Bart Stevens is gratefully acknowledged. The financial support was provided in part by the Office of Naval Research under Contract No. N000 14-84-K-0275. We also thank the Swiss National Science Foundation for a fellowship to one of us (M. Thuillard).
Funders:
Funding AgencyGrant Number
Office of Naval Research (ONR)N000 14-84-K-0275
Swiss National Science Foundation (SNSF)UNSPECIFIED
Subject Keywords:SURFACE REACTIONS, ALUMINIUM, TITANIUM, INTERFACE STRUCTURE, FILM GROWTH, THIN FILMS, ALUMINIUM COMPOUNDS, TITANIUM COMPOUNDS, DIFFUSION, ATOM TRANSPORT, CHEMICAL COMPOSITION, NUCLEATION, HIGH TEMPERATURE, SURFACE CONTAMINATION, BILAYERS
Classification Code:PACS: 68.35.Fx; 68.35.Dv; 81.15.-z; 82.65.+r
Record Number:CaltechAUTHORS:20120530-151638572
Persistent URL:http://resolver.caltech.edu/CaltechAUTHORS:20120530-151638572
Official Citation:Thermal reaction of Al/Ti bilayers with contaminated interface M. Thuillard, L. T. Tran, C. W. Nieh, and M‐A. Nicolet J. Appl. Phys. 65, 2553 (1989); http://dx.doi.org/10.1063/1.342780
Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:31726
Collection:CaltechAUTHORS
Deposited By: Ruth Sustaita
Deposited On:30 May 2012 22:32
Last Modified:26 Dec 2012 15:17

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