Weimer, M. and Kramar, J. and Bai, C. and Baldeschwieler, J. D. and Kaiser, W. J. (1988) Scanning tunneling microscopy investigation of 2H-MoS_2: A layered semiconducting transition‐metal dichalcogenide. Journal of Vacuum Science and Technology A, 6 (2). pp. 336-337. ISSN 0734-2101 http://resolver.caltech.edu/CaltechAUTHORS:20120531-132132319
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Scanning tunneling microscopy (STM) has been enormously successful in solving several important problems in the geometric and electronic structure of homogeneous metallic and semiconducting surfaces. A central question which remains to be answered with respect to the study of compound surfaces, however, is the extent to which the chemical identity of constituent atoms may be established. Recently, progress in this area was made by Feenstra et al. who succeeded in selectively imaging either Ga or As atoms on the GaAs (110) surface. So far this is the only case where such selectivity has been achieved. In an effort to add to our understanding of compound surface imaging we have undertaken a vacuum STM study of 2H-MoS_2, a material which has two structurally and electronically different atomic species at its surface.
|Additional Information:||© 1988 American Vacuum Society. Received 22 September 1987; Accepted 28 October 1987. This work was supported by the Office of Naval Research, Contract No. N00014-87-G-0126, by the National Institutes of Health, Contract No. RO1 GM37226-01, and by a gift from the Shell Companies Foundation.|
|Classification Code:||PACS: 68.65.-k; 07.79.Cz; 61.05.-a; 68.35.B-; 07.78.+s|
|Official Citation:||Summary Abstract: Scanning tunneling microscopy investigation of 2H-MoS[sub 2]: A layered semiconducting transition-metal dichalcogenide M. Weimer, J. Kramar, C. Bai, J. D. Baldeschwieler, and W. J. Kaiser, J. Vac. Sci. Technol. A 6, 336 (1988), DOI:10.1116/1.575408|
|Usage Policy:||No commercial reproduction, distribution, display or performance rights in this work are provided.|
|Deposited By:||Jason Perez|
|Deposited On:||01 Jun 2012 14:56|
|Last Modified:||26 Dec 2012 15:17|
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