Derry, P. L. and Chen, H. Z. and Morkoç, H. and Yariv, A. and Lau, K. Y. and Bar-Chaim, N. and Lee, K. and Rosenberg, J. (1988) Ultralow threshold graded-index separate-confinement heterostructure single quantum well (Al,Ga)As lasers. Journal of Vacuum Science and Technology B, 6 (2). pp. 689-691. ISSN 1071-1023 http://resolver.caltech.edu/CaltechAUTHORS:20120531-132159509
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Broad area graded‐index separate‐confinement heterostructure single quantum well lasers grown by molecular‐beam epitaxy (MBE) with threshold current density as low as 93 A/cm^2 (520 μm long) have been fabricated. Buried lasers formed from similarly structured MBE material with liquid phase epitaxy regrowth had threshold currents at submilliampere levels when high reflectivity coatings were applied to the end facets. A cw threshold current of 0.55 mA was obtained for a laser with facet reflectivities of ∼80%, a cavity length of 120 μm, and an active region stripe width of 1 μm. These devices driven directly with logic level signals have switch‐on delays <50 ps without any current prebias. Such lasers permit fully on–off switching while at the same time obviating the need for bias monitoring and feedback control.
|Additional Information:||© 1988 American Vacuum Society. Received 9 September 1987; accepted 17 November 1987. The Cal tech portion of this work was supported by the National Science Foundation, the Office of Naval Research, and the Air Force Office of Scientific Research. H. M. was partially supported by SDIO-IST through the Jet Propulsion Laboratory. The ORTEL portion was supported by the Defense Advanced Research Projects Agency under the Optical Computing Program and Naval Research Laboratory.|
|Subject Keywords:||QUANTUM WELL STRUCTURES, SWITCHING, HETEROSTRUCTURES, BURIED HETEROSTRUCTURES, SEMICONDUCTOR LASERS, FABRICATION, EXPERIMENTAL DATA, THRESHOLD CURRENT, MOLECULAR BEAM EPITAXY, GALLIUM ARSENIDES, ALUMINIUM ARSENIDES, HETEROJUNCTIONS, OPTICAL REFLECTION, SWITCHES, FEEDBACK|
|Classification Code:||PACS: 42.55.Px; 42.60.Da|
|Official Citation:||Ultralow threshold graded-index separate-confinement heterostructure single quantum well (Al,Ga)As lasers P. L. Derry, H. Z. Chen, H. Morkoc, A. Yariv, K. Y. Lau, N. Bar-Chaim, K. Lee, and J. Rosenberg, J. Vac. Sci. Technol. B 6, 689 (1988), DOI:10.1116/1.584393|
|Usage Policy:||No commercial reproduction, distribution, display or performance rights in this work are provided.|
|Deposited By:||Jason Perez|
|Deposited On:||01 Jun 2012 14:51|
|Last Modified:||26 Dec 2012 15:17|
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