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Ultralow threshold graded-index separate-confinement heterostructure single quantum well (Al,Ga)As lasers

Derry, P. L. and Chen, H. Z. and Morkoç, H. and Yariv, A. and Lau, K. Y. and Bar-Chaim, N. and Lee, K. and Rosenberg, J. (1988) Ultralow threshold graded-index separate-confinement heterostructure single quantum well (Al,Ga)As lasers. Journal of Vacuum Science and Technology B, 6 (2). pp. 689-691. ISSN 1071-1023. http://resolver.caltech.edu/CaltechAUTHORS:20120531-132159509

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Abstract

Broad area graded‐index separate‐confinement heterostructure single quantum well lasers grown by molecular‐beam epitaxy (MBE) with threshold current density as low as 93 A/cm^2 (520 μm long) have been fabricated. Buried lasers formed from similarly structured MBE material with liquid phase epitaxy regrowth had threshold currents at submilliampere levels when high reflectivity coatings were applied to the end facets. A cw threshold current of 0.55 mA was obtained for a laser with facet reflectivities of ∼80%, a cavity length of 120 μm, and an active region stripe width of 1 μm. These devices driven directly with logic level signals have switch‐on delays <50 ps without any current prebias. Such lasers permit fully on–off switching while at the same time obviating the need for bias monitoring and feedback control.


Item Type:Article
Related URLs:
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http://link.aip.org/link/doi/10.1116/1.584393DOIUNSPECIFIED
http://avspublications.org/jvstb/resource/1/jvtbd9/v6/i2/p689_s1PublisherUNSPECIFIED
Additional Information:© 1988 American Vacuum Society. Received 9 September 1987; accepted 17 November 1987. The Cal tech portion of this work was supported by the National Science Foundation, the Office of Naval Research, and the Air Force Office of Scientific Research. H. M. was partially supported by SDIO-IST through the Jet Propulsion Laboratory. The ORTEL portion was supported by the Defense Advanced Research Projects Agency under the Optical Computing Program and Naval Research Laboratory.
Funders:
Funding AgencyGrant Number
NSFUNSPECIFIED
Office of Naval Research (ONR)UNSPECIFIED
Air Force Office of Scientific Research (AFOSR)UNSPECIFIED
JPL SDIO-ISTUNSPECIFIED
Defense Area Research Projects Agency (DARPA)UNSPECIFIED
Subject Keywords:QUANTUM WELL STRUCTURES, SWITCHING, HETEROSTRUCTURES, BURIED HETEROSTRUCTURES, SEMICONDUCTOR LASERS, FABRICATION, EXPERIMENTAL DATA, THRESHOLD CURRENT, MOLECULAR BEAM EPITAXY, GALLIUM ARSENIDES, ALUMINIUM ARSENIDES, HETEROJUNCTIONS, OPTICAL REFLECTION, SWITCHES, FEEDBACK
Classification Code:PACS: 42.55.Px; 42.60.Da
Record Number:CaltechAUTHORS:20120531-132159509
Persistent URL:http://resolver.caltech.edu/CaltechAUTHORS:20120531-132159509
Official Citation:Ultralow threshold graded-index separate-confinement heterostructure single quantum well (Al,Ga)As lasers P. L. Derry, H. Z. Chen, H. Morkoc, A. Yariv, K. Y. Lau, N. Bar-Chaim, K. Lee, and J. Rosenberg, J. Vac. Sci. Technol. B 6, 689 (1988), DOI:10.1116/1.584393
Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:31749
Collection:CaltechAUTHORS
Deposited By: Jason Perez
Deposited On:01 Jun 2012 14:51
Last Modified:26 Dec 2012 15:17

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