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Electrical studies of single-barrier Hg_(1-x)Cd_x Te heterostructures

Chow, D. H. and McCaldin, J. O. and Bonnefoi, A. R. and McGill, T. C. and Sou, I. K. and Faurie, J. P. and Shirland, F. A. and Wu, O. K. (1988) Electrical studies of single-barrier Hg_(1-x)Cd_x Te heterostructures. Journal of Vacuum Science and Technology A, 6 (4). pp. 2614-2618. ISSN 0734-2101. http://resolver.caltech.edu/CaltechAUTHORS:20120601-092710911

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Abstract

We report an experimental study of the electrical properties of single‐barrier Hg_(1−x)Cd_xTe heterostructures grown by molecular‐beam epitaxy. At high temperature, the measured current is interpreted to be the sum of thermionic and tunneling hole currents. This analysis is applied to data from each of three samples, yielding values of the HgTe–CdTe valence‐band discontinuity between 290±50 and 390±75 meV at 300 K. In all three samples, data taken over the range 190–300 K are consistent with a valence‐band offset which decreases at lower temperatures. Current–voltage curves are taken at 4.2 K, yielding a novel single‐barrier negative differential resistance (NDR) due to electron tunneling. Theoretical simulations indicate that ΔE_v must be <100 meV at 4.2 K to produce NDR.


Item Type:Article
Related URLs:
URLURL TypeDescription
http://dx.doi.org/10.1116/1.575517DOIUNSPECIFIED
http://avspublications.org/jvsta/resource/1/jvtad6/v6/i4/p2614_s1PublisherUNSPECIFIED
Additional Information:© 1988 American Vacuum Society. Received 15 December 1987; accepted 24 February 1988. We wish to acknowledge S. Nieh for providing us with important TEM data, and O. J. Marsh, T. K. Woodward, and M. B. Johnson for valuable discussions and assistance. This work was supported by the Air Force Office of Scientific Research under Contract No. AFOSR-86-0306 and by the Defense Advanced Research Projects Agency under Contract No. N00014-86-K-0841 and No. F49620-87-C-0021. One of us (D.H.C.) received financial support from International Business Machines Corporation.
Funders:
Funding AgencyGrant Number
Air Force Office of Scientific Research (AFOSR)AFOSR-86-0306
Defense Advanced Research Projects Agency (DARPA)N00014-86-K-0841
Defense Advanced Research Projects Agency (DARPA)F49620-87-C-0021
International Business Machines CorporationUNSPECIFIED
Subject Keywords:MERCURY TELLURIDES, CADMIUM TELLURIDES, HETEROSTRUCTURES, ELECTRICAL PROPERTIES, THERMIONIC EMISSION, TUNNEL EFFECT, ULTRALOW TEMPERATURE
Classification Code:PACS: 73.40.Lq, 79.40.+z, 73.40.Gk
Record Number:CaltechAUTHORS:20120601-092710911
Persistent URL:http://resolver.caltech.edu/CaltechAUTHORS:20120601-092710911
Official Citation:Electrical studies of single‐barrier Hg1−xCdxTe heterostructures D. H. Chow, J. O. McCaldin, A. R. Bonnefoi, T. C. McGill, I. K. Sou, J. P. Faurie, F. A. Shirland, and O. K. Wu J. Vac. Sci. Technol. A 6, 2614 (1988); http://dx.doi.org/10.1116/1.575517
Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:31764
Collection:CaltechAUTHORS
Deposited By: Ruth Sustaita
Deposited On:01 Jun 2012 16:55
Last Modified:26 Dec 2012 15:17

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