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Molecular-beam epitaxy of CrSi_2 on Si(111)

Fathauer, R. W. and Grunthaner, P. J. and Lin, T. L. and Chang, K. T. and Mazur, J. H. and Jamieson, D. N. (1988) Molecular-beam epitaxy of CrSi_2 on Si(111). Journal of Vacuum Science and Technology B, 6 (2). pp. 708-712. ISSN 1071-1023. http://resolver.caltech.edu/CaltechAUTHORS:20120601-110911510

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Abstract

Chromium disilicide layers have been grown on Si(111) in a commercial molecular‐beam epitaxy machine. Thin layers (10 nm) exhibit two epitaxial relationships, which have been identified as CrSi_2(0001)//Si(111) with CrSi_2[1010]//Si[101], and CrSi_2(0001)//Si(111) with CrSi_2[1120]//Si[101]. The latter case represents a 30° rotation of the CrSi_2 layer about the Si surface normal relative to the former case. Thick (210 nm) layers were grown by four different techniques, and the best‐quality layer was obtained by codeposition of Cr and Si at an elevated temperature. These layers are not single crystal; the largest grains are observed in a layer grown at 825 °C and are 1–2 μm across.


Item Type:Article
Related URLs:
URLURL TypeDescription
http://dx.doi.org/10.1116/1.584352DOIUNSPECIFIED
http://avspublications.org/jvstb/resource/1/jvtbd9/v6/i2/p708_s1PublisherUNSPECIFIED
Additional Information:© 1988 American Vacuum Society. Received 9 September 1987; accepted 17 November 1987. We would like to thank R. Ruiz for SEM analysis and B. Pate for technical assistance. The research described in this paper was carried out by the Jet Propulsion Laboratory (JPL), California Institute of Technology, and was supported by the Strategic Defense Initiative Organization, Innovative Science and Technology Office and the National Aeronautics and Space Administration. The work was performed as part of the JPL's Center for Space Microelectronics Technology. TEM work was performed at the University of Southern California, Center for Microscopy and Microanalysis, and was supported by a University of Southern California Faculty Research and Innovation Fund award to Dr. J. H. Mazur.
Funders:
Funding AgencyGrant Number
Strategic Defense Initiative Organization UNSPECIFIED
Innovative Science and Technology OfficeUNSPECIFIED
NASAUNSPECIFIED
University of Southern California Faculty Research and Innovation Fund UNSPECIFIED
Subject Keywords:SILICON, CHROMIUM SILICIDES, THIN FILMS, EPITAXIAL LAYERS, MOLECULAR BEAM EPITAXY, VAPOR DEPOSITED COATINGS, GRAIN SIZE, VERY HIGH TEMPERATURE, THICKNESS, CRYSTAL ORIENTATION, FILM GROWTH, CRYSTAL STRUCTURE, INTERFACE STRUCTURE, SURFACE STRUCTURE, ISLAND STRUCTURE
Classification Code:PACS: 81.15.Hi, 68.55.-a, 68.55.Ln, 68.35.B-
Record Number:CaltechAUTHORS:20120601-110911510
Persistent URL:http://resolver.caltech.edu/CaltechAUTHORS:20120601-110911510
Official Citation:Molecular‐beam epitaxy of CrSi2 on Si(111) R. W. Fathauer, P. J. Grunthaner, T. L. Lin, K. T. Chang, J. H. Mazur, and D. N. Jamieson J. Vac. Sci. Technol. B 6, 708 (1988); http://dx.doi.org/10.1116/1.584352
Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:31772
Collection:CaltechAUTHORS
Deposited By: Ruth Sustaita
Deposited On:01 Jun 2012 18:38
Last Modified:26 Dec 2012 15:17

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