Popović, Zoya B. and Weikle, Robert M., II and Kim, Moonil and Rutledge, David B. (1991) A 100-MESFET planar grid oscillator. IEEE Transactions on Microwave Theory and Techniques, 39 (2). pp. 193-200. ISSN 0018-9480. http://resolver.caltech.edu/CaltechAUTHORS:POPieeetmtt91
See Usage Policy.
Use this Persistent URL to link to this item: http://resolver.caltech.edu/CaltechAUTHORS:POPieeetmtt91
A 100-MESFET oscillator which gives 21 W of CW effective radiated power (ERP) with a 16-dB directivity and a 20% DC-to-RF conversion efficiency at 5 GHz is presented. The oscillator is a planar grid structure periodically loaded with transistors. The grid radiates and the devices combine quasi-optically and lock to each other. The oscillator can also be quasi-optically injection-locked to an external signal. The planar grid structure is very simple. All of the devices share the same bias, and they can be power and frequency tuned with a mirror behind the grid or dielectric slabs in front of it. An equivalent circuit for an infinite grid predicts the mirror frequency tuning. The planar property of the oscillator offers the possibility of a wafer-scale monolithically integrated source. Thousands of active solid-state devices can potentially be integrated in a high-power source for microwave or millimeter-wave applications.
|Additional Information:||© Copyright 2006 IEEE. Reprinted with permission Manuscript received April 26, 1990; revised October 25, 1990. This work was supported by the Army Research Office and the Northrop Corporation.|
|Subject Keywords:||Schottky gate field effect transistors; equivalent circuits; microwave oscillators; solid-state microwave circuits; tuning; variable-frequency oscillators|
|Usage Policy:||No commercial reproduction, distribution, display or performance rights in this work are provided.|
|Deposited By:||Archive Administrator|
|Deposited On:||19 May 2006|
|Last Modified:||26 Dec 2012 08:53|
Repository Staff Only: item control page