Tsai, Charles S. and Lebens, John A. and Ahn, Channing C. and Nouhi, Akbar and Vahala, Kerry J. (1992) Facet modulation selective epitaxy–a technique for quantum-well wire doublet fabrication. Applied Physics Letters, 60 (2). pp. 240-242. ISSN 0003-6951 http://resolver.caltech.edu/CaltechAUTHORS:TSAapl92
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The technique of facet modulation selective epitaxy and its application to quantum-well wire doublet fabrication are described. Successful fabrication of wire doublets in the AlxGa1–xAs material system is achieved. The smallest wire fabricated has a crescent cross section less than 140 Å thick and less than 1400 Å wide. Backscattered electron images, transmission electron micrographs, cathodoluminescence spectra, and spectrally resolved cathodoluminescence images of the wire doublets are presented.
|Additional Information:||Copyright © 1992 American Institute of Physics. Received 26 September 1991; accepted 11 November 1991. This work was supported by grants from the Office of Naval Research (N00014-90-J-1854), DARPA, and the Caltech President’s Fund. The authors would like to acknowledge Edward Leigh-Wood and John H. Coleman of the Plasma Physics Corp., New York, for the dielectric mask deposition, and Robert J. Lang and Barbara A. Wilson of the NASA Jet Propulsion Laboratory for assistance in using the MOVPE reactor. The transmission electron microscopy work was supported by a grant. from the National Science Foundation (DMR-8811795). C.S.T. would like to acknowledge the support of a National Science Foundation graduate fellowship.|
|Subject Keywords:||ONE–DIMENSIONAL SYSTEMS; QUANTUM WELL STRUCTURES; GALLIUM ARSENIDES; ALUMINIUM ARSENIDES; QUASI–BINARY COMPOUNDS; WIRES; VAPOR PHASE EPITAXY; CRYSTAL ORIENTATION; CONTROL|
|Usage Policy:||No commercial reproduction, distribution, display or performance rights in this work are provided.|
|Deposited By:||Tony Diaz|
|Deposited On:||19 May 2006|
|Last Modified:||26 Dec 2012 08:53|
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