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Paramagnetic point defects in boron‐implanted Hg_(0.7)Cd_(0.3)Te and CdTe

Bowman, R. C., Jr. and Venturini, E. L. and Witt, S. N. (1987) Paramagnetic point defects in boron‐implanted Hg_(0.7)Cd_(0.3)Te and CdTe. Journal of Vacuum Science and Technology A, 5 (5). pp. 3171-3174. ISSN 0734-2101.

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This paper describes the initial observations of electron paramagnetic resonance (EPR) spectra from Hg_(0.7)Cd_0.3Te and CdTe after implantation with boron ions. Sharp and nearly isotropic EPR signals with the free‐electron g values were easily detected at low temperatures (i.e., ≤ 78 K) when the boron ion implant dose was 1×10^16 ions/cm^2 or larger. For identical implant conditions, more intense signals and narrower peaks were obtained from Hg_(0.7)Cd_(0.3)Te samples when compared to the spectra for CdTe. However, the g factors for all implanted Hg_(1−x)Cd_(x)Te samples appear to be equivalent and are very similar to the values reported for the dangling‐bond defects in other ion‐implanted semiconductors. The EPR spectra produced by the boron implants do not seem to correspond to either the degenerate conduction electron bands that form in ion‐implanted Hg_(1−x)Cd_(x)Te or the shallow donor states previously found in chemically doped CdTe. When implanted crystals are cooled below 4 K, partially resolved two‐component line shapes are observed at some orientations. Increasing temperature causes these two‐component lines to collapse into nearly Lorentzian line shapes with temperature‐dependent widths. This behavior is consistent with a thermally activated process by which the paramagnetic spins hop between inequivalent locations.

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Additional Information:© 1987 American Vacuum Society. Received 5 November 1986; accepted 15 April 1987. We wish to thank ProfessorS. I. Chan for making available the EPR spectrometer at Caltech, R. E. Robertson for assistance with the samples, and Dr. J. F. Knudsen for the ion implants. The work at The Aerospace Corporation has been supported by the U. S. Air Force Space Division under Contract No. F04701-85-C-0086. Sandia National Laboratories are operated for the U. S. Department of Energy under Contract No. DE-AC04-76DP00789.
Funding AgencyGrant Number
Air Force Space DivisionF04701-85-C-0086
Department of Energy (DOE)DE-AC04-76DP00789
Subject Keywords:point defects; electron spin resonance; boron 11; mercury tellurides; cadmium tellurides; impurities; ion implantation; electronic structure
Classification Code:PACS: 76.30.L; 71.55.Gs; 72.20.Jv; 71.20.Nr; 71.20.Ps
Record Number:CaltechAUTHORS:20120626-144825829
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Official Citation:Paramagnetic point defects in boron-implanted Hg[sub 0.7]Cd[sub 0.3]Te and CdTe R. C. Bowman, Jr., E. L. Venturini, and S. N. Witt, J. Vac. Sci. Technol. A 5, 3171 (1987), DOI:10.1116/1.574862
Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:32105
Deposited By: Aucoeur Ngo
Deposited On:26 Jun 2012 22:38
Last Modified:26 Dec 2012 15:24

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