Banwell, Thomas and Nicolet, M.-A. and Averback, R. S. and Thompson, L. J. (1986) Effect of dose rate on ion beam mixing in Nb-Si. Applied Physics Letters, 48 (22). pp. 1519-1521. ISSN 0003-6951. http://resolver.caltech.edu/CaltechAUTHORS:20120626-145123709
- Published Version
See Usage Policy.
Use this Persistent URL to link to this item: http://resolver.caltech.edu/CaltechAUTHORS:20120626-145123709
The influence of dose rate, i.e., ion flux, on ion beam mixing in Nb‐Si bilayer samples was measured at room temperature and 325 °C. At the higher temperature, an increase in dose rate of a factor of 20 caused a decrease in the thickness of the mixed layer by a factor of 1.6 for equal total doses. At room temperature, the same change in flux had no effect on mixing. These results are consistent with radiation‐enhanced diffusion theory in the recombination‐limited regime.
|Additional Information:||© 1986 American Institute of Physics. Received 10 January 1986; accepted 8 April 1986. This work was supported at Argonne National Laboratory by the U.S. Department of Energy, BES-Materials Sciences, under contract No. W-31-109-Eng-38. Partial financial support at the California Institute of Technology provided by the Office of Naval Research under contract No. N00014-84-16-0275 is also acknowledged.|
|Subject Keywords:||BILAYERS, MIXING, ION COLLISIONS, NICKEL SILICIDES, PHYSICAL RADIATION EFFECTS, THICKNESS, HIGH TEMPERATURE, DIFFUSION, LAYERS, RECOMBINATION, DOSE RATES|
|Classification Code:||PACS: 61.80.Jh, 66.30.J-, 68.35.Fx, 68.55.-a|
|Official Citation:||Effect of dose rate on ion beam mixing in Nb‐Si Thomas Banwell, M‐A. Nicolet, R. S. Averback, and L. J. Thompson Appl. Phys. Lett. 48, 1519 (1986); http://dx.doi.org/10.1063/1.96854|
|Usage Policy:||No commercial reproduction, distribution, display or performance rights in this work are provided.|
|Deposited By:||Ruth Sustaita|
|Deposited On:||26 Jun 2012 22:15|
|Last Modified:||26 Dec 2012 15:24|
Repository Staff Only: item control page