Banwell, T. C. and Zhao, X.-A. and Nicolet, M.-A. (1986) Effects of ion irradiation on conductivity of CrSi_2 thin films. Journal of Applied Physics, 59 (9). pp. 3077-3080. ISSN 0021-8979 http://resolver.caltech.edu/CaltechAUTHORS:20120626-152109958
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Electrical resistivity measurements are used to study damage in CrSi_2 thin films induced by Ne, Ar, or Xe ion irradiation over a fluence range of 10^(10)–10^(15) ions cm^(−2). Irradiation produces a factor of 5–12 increase in film conductivity at the higher fluences. The influence of defect generation and recombination is evident. We speculate that formation of a compound defect is a dominant factor enhancing film conductivity. A temperature dependence at low fluences is reported and tentatively identified.
|Additional Information:||© 1986 American Institute of Physics. Received 21 October 1985; accepted 14 January 1986. We thank A. Ghatfari for assistance with the evaporations and A. Collinwood for manuscript preparation. We acknowledge the partial financial support by the Office of Naval Research under Contract no. N00014-84-K-0275 (D. Polk). T. Banwell thanks IBM for a fellowship during this work.|
|Subject Keywords:||CHROMIUM SILICIDES, ELECTRIC CONDUCTIVITY, NEON IONS, ARGON IONS, XENON IONS, DAMAGE, CRYSTAL DEFECTS, RECOMBINATION, PHYSICAL RADIATION EFFECTS|
|Classification Code:||PACS: 61.80.Jh, 81.40.Rs, 73.61.At, 68.55.Ln|
|Official Citation:||Effects of ion irradiation on conductivity of CrSi2 thin films T. C. Banwell, X.‐A. Zhao, and M‐A. Nicolet J. Appl. Phys. 59, 3077 (1986); http://dx.doi.org/10.1063/1.336931|
|Usage Policy:||No commercial reproduction, distribution, display or performance rights in this work are provided.|
|Deposited By:||Ruth Sustaita|
|Deposited On:||26 Jun 2012 22:41|
|Last Modified:||26 Dec 2012 15:24|
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