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Thermal stability and nitrogen redistribution in the <Si>/Ti/W-N/ AI metallization scheme

So, F. C. T. and Kolawa, E. and Kattelus, H. P. and Zhao, X.-A. and Nicolet, M.-A. and Lien, C.-D. (1986) Thermal stability and nitrogen redistribution in the <Si>/Ti/W-N/ AI metallization scheme. Journal of Vacuum Science and Technology A, 4 (6). pp. 3078-3081. ISSN 0734-2101. http://resolver.caltech.edu/CaltechAUTHORS:20120627-125934625

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Abstract

Backscattering spectrometry, Auger electron spectroscopy, and x‐ray diffraction have been used to monitor the thin‐film reactions and nitrogen redistribution in the 〈Si〉/Ti/W–N/Al metallization system. It is found that nitrogen in the W–N layer redistributes into Ti after annealing at temperatures above 500 °C. As a consequence of this redistribution of nitrogen, a significant amount of interdiffusion between Al and the underlayers is observed after annealing at 550 °C. This result contrasts markedly with that for the 〈Si〉/W–N/Al system, where no interdiffusion can be detected after the same thermal treatment. We attribute this redistribution of nitrogen to the stronger affinity of Ti for nitrogen than W. If the Ti layer is replaced by a sputtered TiSi_(2.3) film, no redistribution of nitrogen or reactions can be detected after annealing at 550 °C for 30 min.


Item Type:Article
Related URLs:
URLURL TypeDescription
http://dx.doi.org/10.1116/1.573631DOIUNSPECIFIED
http://avspublications.org/jvsta/resource/1/jvtad6/v4/i6/p3078_s1PublisherUNSPECIFIED
Additional Information:© 1986 American Vacuum Society. Received 11 April 1986; accepted 17 July 1986. We gratefully acknowledge Dr. K.-T. Ho (UCLA) for his many stimulating and inspiring discussions. R. Gorris is acknowledged for his superb technical assistance and A. Collinwood for her patient assistance in the manuscript preparation. Financial support from the Army Research Office under Contract No. DAAG29-85-K-0192, Jet Propulsion Laboratory, and Varian Research Center is gratefully acknowledged.
Funders:
Funding AgencyGrant Number
Army Research Office (ARO)DAAG29-85-K-0192
JPLUNSPECIFIED
Varian Research CenterUNSPECIFIED
Subject Keywords:RBS, AUGER ELECTRON SPECTROSCOPY, X−RAY DIFFRACTION, SURFACE REACTIONS, STABILITY, METALLIZATION, NITROGEN, TITANIUM, TUNGSTEN, ALUMINIUM, DIFFUSION, TITANIUM SILICIDES, ATOM TRANSPORT, DIFFUSION BARRIERS
Classification Code:PACS: 68.35.Fx, 66.30.Ny, 82.65.+r, 68.60.Dv
Record Number:CaltechAUTHORS:20120627-125934625
Persistent URL:http://resolver.caltech.edu/CaltechAUTHORS:20120627-125934625
Official Citation:Thermal stability and nitrogen redistribution in the 〈Si〉/Ti/W–N/Al metallization scheme F. C. T. So, E. Kolawa, H. P. Kattelus, X.‐A. Zhao, M‐A. Nicolet, and C.‐D. Lien J. Vac. Sci. Technol. A 4, 3078 (1986); http://dx.doi.org/10.1116/1.573631
Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:32145
Collection:CaltechAUTHORS
Deposited By: Ruth Sustaita
Deposited On:27 Jun 2012 20:55
Last Modified:26 Dec 2012 15:25

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