So, F. C. T. and Kolawa, E. and Kattelus, H. P. and Zhao, X.-A. and Nicolet, M.-A. and Lien, C.-D. (1986) Thermal stability and nitrogen redistribution in the <Si>/Ti/W-N/ AI metallization scheme. Journal of Vacuum Science and Technology A, 4 (6). pp. 3078-3081. ISSN 0734-2101 http://resolver.caltech.edu/CaltechAUTHORS:20120627-125934625
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Backscattering spectrometry, Auger electron spectroscopy, and x‐ray diffraction have been used to monitor the thin‐film reactions and nitrogen redistribution in the 〈Si〉/Ti/W–N/Al metallization system. It is found that nitrogen in the W–N layer redistributes into Ti after annealing at temperatures above 500 °C. As a consequence of this redistribution of nitrogen, a significant amount of interdiffusion between Al and the underlayers is observed after annealing at 550 °C. This result contrasts markedly with that for the 〈Si〉/W–N/Al system, where no interdiffusion can be detected after the same thermal treatment. We attribute this redistribution of nitrogen to the stronger affinity of Ti for nitrogen than W. If the Ti layer is replaced by a sputtered TiSi_(2.3) film, no redistribution of nitrogen or reactions can be detected after annealing at 550 °C for 30 min.
|Additional Information:||© 1986 American Vacuum Society. Received 11 April 1986; accepted 17 July 1986. We gratefully acknowledge Dr. K.-T. Ho (UCLA) for his many stimulating and inspiring discussions. R. Gorris is acknowledged for his superb technical assistance and A. Collinwood for her patient assistance in the manuscript preparation. Financial support from the Army Research Office under Contract No. DAAG29-85-K-0192, Jet Propulsion Laboratory, and Varian Research Center is gratefully acknowledged.|
|Subject Keywords:||RBS, AUGER ELECTRON SPECTROSCOPY, X−RAY DIFFRACTION, SURFACE REACTIONS, STABILITY, METALLIZATION, NITROGEN, TITANIUM, TUNGSTEN, ALUMINIUM, DIFFUSION, TITANIUM SILICIDES, ATOM TRANSPORT, DIFFUSION BARRIERS|
|Classification Code:||PACS: 68.35.Fx, 66.30.Ny, 82.65.+r, 68.60.Dv|
|Official Citation:||Thermal stability and nitrogen redistribution in the 〈Si〉/Ti/W–N/Al metallization scheme F. C. T. So, E. Kolawa, H. P. Kattelus, X.‐A. Zhao, M‐A. Nicolet, and C.‐D. Lien J. Vac. Sci. Technol. A 4, 3078 (1986); http://dx.doi.org/10.1116/1.573631|
|Usage Policy:||No commercial reproduction, distribution, display or performance rights in this work are provided.|
|Deposited By:||Ruth Sustaita|
|Deposited On:||27 Jun 2012 20:55|
|Last Modified:||26 Dec 2012 15:25|
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