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Thermal oxidation of amorphous ternary Ta36Si14N50 thin films

Pokela, P. J. and Reid, J. S. and Kwok, C.-K. and Kolawa, E. and Nicolet, M.-A. (1991) Thermal oxidation of amorphous ternary Ta36Si14N50 thin films. Journal of Applied Physics, 70 (5). pp. 2828-2832. ISSN 0021-8979. http://resolver.caltech.edu/CaltechAUTHORS:POKjap91

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Abstract

The oxidation kinetics of reactively sputtered amorphous Ta36Si14N50 thin films are studied in dry and wet ambient in the temperature range of 650-850-degrees-C by backscattering spectrometry, Dektak profilometer, and x-ray diffraction analyses. The dry oxidation is well described by a parabolic time dependence which corresponds to a process controlled by the diffusion of the oxidant in the oxide. The growth of the oxide in wet ambient is initially very rapid and then proceeds linearly which means that the process is reaction limited. Both oxidation rates are thermally activated. The activation energies are 2.0 eV for dry and 1.4 eV for wet ambient. The pre-exponential factors are 0.17 x 10^(16) angstrom 2/min and 7.4 x 10^(8) angstrom/min, respectively. Both the dry and wet oxidation of the amorphous ternary Ta36Si14N50 film result in the formation of an x-ray amorphous Ta14Si5.5O80 layer.


Item Type:Article
Additional Information:Copyright © 1991 American Institute of Physics. Received 25 March 1991; accepted 6 June 1991. P. J. Pokela gratefully acknowledges a fellowship provided by the Academy of Finland. Also, we wish to thank the Finnish Culture Foundation and the Lohja Corporation for financial support. The authors are grateful to R. Gorris and B. Stevens for their technical assistance and R. Sampley for her contribution in manuscript preparation. The work was also partly supported by the U.S. Army Research Office and a grant from Intel Corporation.
Subject Keywords:TANTALUM NITRIDES; SILICON NITRIDES; OXIDATION; THIN FILMS; HEAT TREATMENTS; SPUTTERING; TEMPERATURE DEPENDENCE; TERNARY COMPOUNDS; AMORPHOUS STATE; HIGH TEMPERATURE; VERY HIGH TEMPERATURE; BACKSCATTERING; X–RAY DIFFRACTION; TIME DEPENDENCE; ACTIVATION ENERGY; DRYING; WET OXIDATION PROCESSES
Record Number:CaltechAUTHORS:POKjap91
Persistent URL:http://resolver.caltech.edu/CaltechAUTHORS:POKjap91
Alternative URL:http://dx.doi.org/10.1063/1.349345
Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:3216
Collection:CaltechAUTHORS
Deposited By: Tony Diaz
Deposited On:23 May 2006
Last Modified:26 Dec 2012 08:53

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