Sands, T. and De Boeck, J. and Harbison, J. P. and Scherer, A. and Gilchrist, H. L. and Cheeks, T. L. and Miceli, P. F. and Ramesh, R. and Keramidas, V. G. (1993) The extraordinary Hall effect in coherent epitaxial tau (Mn,Ni)Al thin films on GaAs. Journal of Applied Physics, 73 (10). pp. 6399-6401. ISSN 0021-8979. http://resolver.caltech.edu/CaltechAUTHORS:SANjap93
See Usage Policy.
Use this Persistent URL to link to this item: http://resolver.caltech.edu/CaltechAUTHORS:SANjap93
Ultrathin coherent epitaxial films of ferromagnetic tau(Mn,Ni)0.60Al0.40 have been grown by molecular beam epitaxy on GaAs substrates. X-ray scattering and cross-sectional transmission electron microscopy measurements confirm that the c axis of the tetragonal tau unit cell is aligned normal to the (001) GaAs substrate. Measurements of the extraordinary Hall effect (EHE) show that the films are perpendicularly magnetized, exhibiting EHE resistivities saturating in the range of 3.3-7.1 muOMEGA-cm at room temperature. These values of EHE resistivity correspond to signals as large as +7 and -7 mV for the two magnetic states of the film with a measurement current of 1 mA. Switching between the two magnetic states is found to occur at distinct field values that depend on the previously applied maximum field. These observations suggest that the films are magnetically uniform. As such, tau(Mn,Ni)Al films may be an excellent medium for high-density storage of binary information.
|Additional Information:||Copyright © 1993 American Institute of Physics. The authors acknowledge S. J. Allen, Jr. and M. Leadbeater for their many contributions to the early stages of this work. Also, Rutherford backscattering data from B. J. Wilkens helped to calibrate film thicknesses and compositions. One of the authors (JDB) acknowledges NATO for financial assistance.|
|Subject Keywords:||THIN FILMS; MOLECULAR BEAM EPITAXY; FERROMAGNETIC MATERIALS; INTERMETALLIC COMPOUNDS; TERNARY COMPOUNDS; MANGANESE COMPOUNDS; NICKEL COMPOUNDS; ALUMINIUM COMPOUNDS; HALL EFFECT; ANOMALOUS PROPERTIES; SWITCHING; MAGNETIC STRUCTURE|
|Usage Policy:||No commercial reproduction, distribution, display or performance rights in this work are provided.|
|Deposited By:||Tony Diaz|
|Deposited On:||23 May 2006|
|Last Modified:||26 Dec 2012 08:53|
Repository Staff Only: item control page