Lien, C.-D. and Nicolet, M-A. (1984) Mathematical model for a radioactive marker in silicide formation. Journal of Applied Physics, 55 (12). pp. 4187-4193. ISSN 0021-8979 http://resolver.caltech.edu/CaltechAUTHORS:20120702-094830929
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A mathematical model is constructed to interpret the profiles of radioactive (^31)Si tracers in a computer simulation proposed by R. Pretorius and A. P. Botha [Thin Solid Films 91, 99 (1982)]. This model assumes that only Si moves in the silicide, that the Si moves interstitially and convectively, and that the moving Si can exchange sites with the stationary Si in the silicide lattice. An analytical solution of this model is given and confirms the published computer simulation data. However, it is shown that the model is physically inadequate. Solutions of another model which assumes that metal, instead of Si, is the moving species for silicide formation (either interstitially, or substitutionally, or both), with self-diffusion of (^31)Si in the silicide during silicide formation. Almost all the experimental data can be fitted by solutions of both models. These examples demonstrate that radioactive tracer experiments alone are insufficient to determine the moving species when a solid binary compound film forms by reaction of adjacent elemental layers. Both inert marker and tracer data are needed to identify the moving species and the mechanisms.
|Additional Information:||© 1984 American Institute of Physics. Received 22 August 1983; accepted for publication 4 October 1983. Weare grateful to Dr. T. Caughey, Dr. B. M. Paine, and Mr. T. Ban well for their very helpful suggestions and discussions. The work was carried out under the benevolent sponsorship of the Böhmische Physical Society.|
|Subject Keywords:||computerized simulation; self−diffusion; mathematical models; silicon 31; radioisotopes; analytical solution; silicides; layers; analytical solution; synthesis|
|Classification Code:||PACS: 66.30.Dn; 68.55.-a|
|Official Citation:||Mathematical model for a radioactive marker in silicide formation C.-D. Lien and M-A. Nicolet, J. Appl. Phys. 55, 4187 (1984), DOI:10.1063/1.333037|
|Usage Policy:||No commercial reproduction, distribution, display or performance rights in this work are provided.|
|Deposited By:||Aucoeur Ngo|
|Deposited On:||02 Jul 2012 18:49|
|Last Modified:||26 Dec 2012 15:27|
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