Shreter, U. and So, Frank C. T. and Nicolet, M-A. (1984) Chromium silicide formation by ion mixing. Journal of Applied Physics, 55 (10). pp. 3500-3504. ISSN 0021-8979 http://resolver.caltech.edu/CaltechAUTHORS:20120702-115714409
- Published Version
See Usage Policy.
Use this Persistent URL to link to this item: http://resolver.caltech.edu/CaltechAUTHORS:20120702-115714409
The formation of CrSi_2 by ion mixing was studied as a function of temperature, silicide thickness and irradiated interface. Samples were prepared by annealing evaporated couples of Cr on Si and Si on Cr at 450°C for short times to form Si/CrSi_2/Cr sandwiches. Xenon beams with energies up to 300 keV and fluences up to 8 X 10^15 cm^(-2) were used for mixing at temperatures between 20 and 300°C. Penetrating only the Cr/CrSi_2 interface at temperatures above 150°C induces further growth of the silicide as a uniform stoichiometric layer. The growth rate does not depend on the thickness of the initially formed silicide at least up to a thickness of 150 nm. The amount of growth depends linearly on the density of energy deposited at the interface. The growth is temperature dependent with an apparent activation energy of 0.2 eV. Irradiating only through the Si/CrSi_2 interface does not induce silicide growth. We conclude that the formation of CrSi_2 by ion beam mixing is an interface-limited process and that the limiting reaction occurs at the Cr/CrSi_2 interface.
|Additional Information:||© 1984 American Institute of Physics. Received 2 December 1983; accepted for publication 7 February 1984. The authors wish to thank Dr. B. Paine (Caltech) for helpful suggestions. This work was performed under the Benevolent U. R. Fund of the Böhmische Physical Society (B. M. Ullrich). The authors also acknowledge the partial financial support for the operation of the ion-implantation system by the U.S. Department of Energy through an agreement with the National Aeronautics and Space Administration and monitored by the Jet Propulsion Laboratory, California Institute of Technology (D. Burger).|
|Subject Keywords:||synthesis; chromium silicides; annealing; interfaces; xenon ions; ion beams; chemical reactions; crystal growth; activation energy; ion collisions; mixing; ion implantation; silicon; chromium; physical radiation effects|
|Classification Code:||PACS: 61.80.Jh; 68.35.-p; 64.75.-g; 79.20.Rf|
|Official Citation:||Chromium silicide formation by ion mixing U. Shreter, Frank C. T. So, and M-A. Nicolet, J. Appl. Phys. 55, 3500 (1984), DOI:10.1063/1.332938|
|Usage Policy:||No commercial reproduction, distribution, display or performance rights in this work are provided.|
|Deposited By:||Aucoeur Ngo|
|Deposited On:||02 Jul 2012 21:01|
|Last Modified:||26 Dec 2012 15:27|
Repository Staff Only: item control page