Cheng, C. C. and Scherer, A. and Arbet-Engels, V. and Yablonovitch, E. (1996) Lithographic band gap tuning in photonic band gap crystals. Journal of Vacuum Science and Technology B, 14 (6). pp. 4110-4114. ISSN 1071-1023 http://resolver.caltech.edu/CaltechAUTHORS:CHEjvstb96
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We describe the lithographic control over the spectral response of three-dimensional photonic crystals. By precise microfabrication of the geometry using a reproducible and reliable procedure consisting of electron beam lithography followed by dry etching, we have shifted the conduction band of crystals within the near-infrared. Such microfabrication has enabled us to reproducibly define photonic crystals with lattice parameters ranging from 650 to 730 nm. In GaAs semiconductor wafers, these can serve as high-reflectivity (> 95%) mirrors. Here, we show the procedure used to generate these photonic crystals and describe the geometry dependence of their spectral response.
|Additional Information:||©1996 American Vacuum Society (Received 10 June 1996; accepted 17 August 1996) This work was supported by the National Science Foundation under Grant No. ECS-9310681. The authors also gratefully acknowledge helpful suggestions from Reynold Johnson and Andrew Cleland.|
|Subject Keywords:||OPTOELECTRONIC DEVICES; OPTICAL MATERIALS; GALLIUM ARSENIDES; LITHOGRAPHY; ELECTRON BEAMS; ETCHING; ION BEAMS; CRYSTAL STRUCTURE; LATTICE PARAMETERS; BAND STRUCTURE; NEAR INFRARED RADIATION; MIRRORS; SPECTRAL RESPONSE; REFLECTIVITY|
|Usage Policy:||No commercial reproduction, distribution, display or performance rights in this work are provided.|
|Deposited By:||Archive Administrator|
|Deposited On:||23 May 2006|
|Last Modified:||26 Dec 2012 08:53|
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