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Fabrication of photonic band-gap crystals

Cheng, C. C. and Scherer, A. (1995) Fabrication of photonic band-gap crystals. Journal of Vacuum Science and Technology B, 13 (6). pp. 2696-2700. ISSN 1071-1023. http://resolver.caltech.edu/CaltechAUTHORS:CHEjvstb95b

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Abstract

We describe the fabrication of three-dimensional photonic crystals using a reproducible and reliable procedure consisting of electron beam lithography followed by a sequence of dry etching steps. Careful fabrication has enabled us to define photonic crystals with 280 nm holes defined with 350 nm center to center spacings in GaAsP and GaAs epilayers. We construct these photonic crystals by transferring a submicron pattern of holes from 70-nm-thick polymethylmethacrylate resist layers into 300-nm-thick silicon dioxide ion etch masks, and then anisotropically angle etching the III-V semiconductor material using this mask. Here, we show the procedure used to generate photonic crystals with up to four lattice periods depth.


Item Type:Article
Additional Information:©1995 American Vacuum Society (Received 19 June 1995; accepted 9 August 1995) This work was supported by the National Science Foundation under Grant No. ECS-9310681. The authors also gratefully acknowledge the help of Professor Eli Yablonovich and Vincent Arbet-Engels in this work, as well as helpful suggestions from Reynold Johnson and Andrew Cleland.
Subject Keywords:ELECTRON BEAMS; ETCHING; GALLIUM ARSENIDES; GALLIUM PHOSPHIDES; INCIDENCE ANGLE; LITHOGRAPHY; OPTICAL MATERIALS; THREE – DIMENSIONAL SYSTEMS
Record Number:CaltechAUTHORS:CHEjvstb95b
Persistent URL:http://resolver.caltech.edu/CaltechAUTHORS:CHEjvstb95b
Alternative URL:http://dx.doi.org/10.1116/1.588051
Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:3229
Collection:CaltechAUTHORS
Deposited By: Archive Administrator
Deposited On:23 May 2006
Last Modified:26 Dec 2012 08:53

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