Collins, R. T. and McGill, T. C. (1983) Electronic properties of deep levels in p‐type CdTe. Journal of Vacuum Science and Technology A, 1 (3). pp. 1633-1636. ISSN 0734-2101 http://resolver.caltech.edu/CaltechAUTHORS:20120709-104756094
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DLTS and associated electrical measurements were made on unintentionally doped CdTe crystals obtained from several vendors, on Cu‐doped CdTe, and on Te‐annealed CdTe. All of the crystals were p‐type. Four majority carrier deep levels were observed in the temperature range from 100–300 K with activation energies relative to the valence band of 0.2, 0.41, 0.45, and 0.65 eV. Two of these levels were specific to certain crystals while the other two were seen in every sample and are attributed to common impurities or native defects. Fluctuations in the concentrations of levels across samples and as a result of modest sample heating (400 K) were also observed.
|Additional Information:||© 1983 American Vacuum Society. Received 1 March 1983; accepted 25 May 1983. The authors wish to acknowledge Rockwell International and Texas Instruments for providing the CdTe used in this research. This work was supported in part by the Army Research Office under Contract No. DAAG29-80-C-0103.|
|Subject Keywords:||deep energy levels; cadmium tellurides; crystal doping; doped materials; impurities; heating; sample preparation; charge carriers; tellurium; annealing; electrical properties; activation energy; valence bands; ev range; low temperature; medium temperature|
|Classification Code:||PACS: 72.80.Ey; 72.20.Jv; 78.40.Fy|
|Official Citation:||Electronic properties of deep levels in p-type CdTe R. T. Collins and T. C. McGill, J. Vac. Sci. Technol. A 1, 1633 (1983), DOI:10.1116/1.572245|
|Usage Policy:||No commercial reproduction, distribution, display or performance rights in this work are provided.|
|Deposited By:||Jason Perez|
|Deposited On:||09 Jul 2012 20:10|
|Last Modified:||26 Dec 2012 15:29|
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