Shreter, U. and Fernandez, R. and Nicolet, M-A. (1983) Temperature-dependent ion mixing and diffusion during sputtering of thin films of CrSi_2 on silicon. Applied Physics Letters, 43 (3). pp. 247-249. ISSN 0003-6951. http://resolver.caltech.edu/CaltechAUTHORS:20120717-090516601
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Measurements of sputtering yields and composition profiles have been carried out using backscattering spectrometry for samples of CrSi_2 on Si irradiated with 200‐keV Xe ions. When the CrSi_2 layer is thinner than the ion range, the sputtering yield ratio of Si to Cr increases from 3.5 for room‐temperature irradiation to 65 at 290 °C. For a thick sample, the corresponding increase is from 2.4 to 4.0. only. These changes are explained in terms of a rise in the Si surface concentration at 290 °C. The driving force for this process seems to be the establishment of stoichiometric CrSi_2 compound. Transport of Si to the surface is by ion mixing in the thin sample and thermal diffusion through the thick layer.
|Additional Information:||© 1983 American Institute of Physics. Received 10 March 1983; accepted for publication 12 May 1983. This work was performed under the Benevolent U. R. Fund of the Böhmische Physical Society (B. M. Ullrich). The authors also acknowledge the partial financial support for the operation of the ion implantation system by the U. S. Department of Energy through an agreement with the National Aeronautics and Space Administration and monitored by the Jet Propulsion Laboratory, California Institute of Technology (D. Bickler).|
|Subject Keywords:||chromium silicides, ion beams, thin films, silicon, sorptive properties, backscattering, spectrometers, chemical composition, yields, physical radiation effects, xenon ions, kev range 100−1000, medium temperature, stoichiometry, diffusion, temperature dependence, high temperature, mixing|
|Classification Code:||PACS: 79.20.Rf, 68.60.-p, 64.75.-g|
|Official Citation:||Temperature‐dependent ion mixing and diffusion during sputtering of thin films of CrSi2 on silicon U. Shreter, R. Fernandez, and M‐A. Nicolet Appl. Phys. Lett. 43, 247 (1983); http://dx.doi.org/10.1063/1.94314|
|Usage Policy:||No commercial reproduction, distribution, display or performance rights in this work are provided.|
|Deposited By:||Ruth Sustaita|
|Deposited On:||17 Jul 2012 20:29|
|Last Modified:||26 Dec 2012 15:34|
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