Blauvelt, H. and Margalit, S. and Yariv, A. (1982) AlGaAs inverted strip buried heterostructure lasers. Applied Physics Letters, 41 (5). pp. 485-487. ISSN 0003-6951. http://resolver.caltech.edu/CaltechAUTHORS:20120717-105053013
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Inverted strip buried heterostructure lasers have been fabricated. These lasers have threshold currents and quantum efficiencies that are comparable to those of conventional buried heterostructure lasers. The optical mode is confined by a weakly guiding strip loaded waveguide which makes possible operation in the fundamental transverse mode for larger stripe widths than is possible for conventional buried heterostructure lasers. Scattering of the laser light by irregularities in the sidewalls of the waveguide, which can be a serious problem in conventional buried heterostructure lasers, is also greatly reduced in these lasers.
|Additional Information:||© 1982 American Institute of Physics. Received 7 May 1982; accepted for publication 14 June 1982. This work is supported by the Office of Naval Research and the National Science Foundation.|
|Subject Keywords:||semiconductor lasers; heterojunctions; configuration; aluminium arsenides; gallium arsenides; experimental data; fabrication; threshold current; quantum efficiency; oscillation modes; waveguides; scattering|
|Classification Code:||PACS: 42.55.Px; 42.79.Sz|
|Official Citation:||AlGaAs inverted strip buried heterostructure lasers H. Blauvelt, S. Margalit, and A. Yariv, Appl. Phys. Lett. 41, 485 (1982), DOI:10.1063/1.93540|
|Usage Policy:||No commercial reproduction, distribution, display or performance rights in this work are provided.|
|Deposited By:||Aucoeur Ngo|
|Deposited On:||17 Jul 2012 18:15|
|Last Modified:||26 Dec 2012 15:34|
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