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Ion implantation and low-temperature epitaxial regrowth of GaAs

Grimaldi, M. G. and Paine, B. M. and Nicolet, M-A. and Sadana, D. K. (1981) Ion implantation and low-temperature epitaxial regrowth of GaAs. Journal of Applied Physics, 52 (6). pp. 4038-4046. ISSN 0021-8979. http://resolver.caltech.edu/CaltechAUTHORS:20120717-155107148

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Abstract

Channeling and transmission electron microscopy have been used to investigate the parameters that govern the extent of damage in ion‐implanted GaAs and the crystal quality following capless furnace annealing at low temperature (∼400 °C). The implantation‐induced disorder showed a strong dependence on the implanted ion mass and on the substrate temperature during implantation. When the implantation produced a fully amorphous surface layer the main parameter governing the regrowth was the amorphous thickness. Formation of microtwins after annealing was observed when the initial amorphous layer was thicker than 400 Å. Also, the number of extended residual defects after annealing increased linearly with the initial amorphous thickness and extrapolation of that curve predicts good regrowth of very thin (<400 Å) GaAs amorphous layers produced by ion implantation. A model is presented to explain the observed features of the low‐temperature annealing of GaAs.


Item Type:Article
Related URLs:
URLURL TypeDescription
http://dx.doi.org/10.1063/1.329213DOIUNSPECIFIED
http://jap.aip.org/resource/1/japiau/v52/i6/p4038_s1PublisherUNSPECIFIED
Additional Information:© 1981 American Institute of Physics. Received 17 November 1980; accepted for publication 27 February 1981. We would like to thank Professor S. "Fernando" Lau of the University of California, San Diego, for encouragement and helpful advice throughout the course of this work. We also thank Professor Jack Washburn of the University of California, Berkeley, for useful discussions, M. Parks for much secretarial assistance, and D. Tonn for help with the implantations. This work was supported in part by the Advanced Research Project Agency of the Department of Defense and was monitored by the Air Force Office of Scientific Research under Contract No. F-49620-77-C-0087. Financial support was also received from the Basic Research Division of the Department of Energy through the Materials and Molecular Research Division of the Lawrence Berkeley Laboratory.
Funders:
Funding AgencyGrant Number
Air Force Office of Scientific ResearchF-49620-77-C-0087
Department of Energy (DOE) Basic Research DivisionUNSPECIFIED
Subject Keywords:GALLIUM ARSENIDES, RECRYSTALLIZATION, ION IMPLANTATION, EPITAXY, CHANNELING, TRANSMISSION ELECTRON MICROSCOPY, HIGH TEMPERATURE, PARAMETRIC ANALYSIS, DAMAGE, ANNEALING, SUBSTRATES, TEMPERATURE DEPENDENCE, AMORPHOUS STATE, SURFACES, LAYERS, THICKNESS, MATHEMATICAL MODELS
Classification Code:PACS: 68.55.-a, 61.72.U-, 61.85.+p, 07.79.Cz, 61.05.-a
Record Number:CaltechAUTHORS:20120717-155107148
Persistent URL:http://resolver.caltech.edu/CaltechAUTHORS:20120717-155107148
Official Citation:Ion implantation and low‐temperature epitaxial regrowth of GaAs M. G. Grimaldi, B. M. Paine, M‐A. Nicolet, and D. K. Sadana J. Appl. Phys. 52, 4038 (1981); http://dx.doi.org/10.1063/1.329213
Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:32531
Collection:CaltechAUTHORS
Deposited By: Ruth Sustaita
Deposited On:18 Jul 2012 17:45
Last Modified:26 Dec 2012 15:35

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