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Surface vacancies in II-VI and III-V zinc blende semiconductors

Daw, M. S. and Smith, D. L. and Swarts, C. A. and McGill, T. C. (1981) Surface vacancies in II-VI and III-V zinc blende semiconductors. Journal of Vacuum Science and Technology, 19 (3). pp. 508-512. ISSN 0022-5355. http://resolver.caltech.edu/CaltechAUTHORS:20120717-163206505

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Abstract

We present calculations of the bound state energy levels of ideal vacancies near the (110) surface of some zinc blende II-VI and III-V semiconductors: CdTe, ZnTe, GaAs, AlAs, InAs, and some alloys among them. Here we compare vacancies near the surface of II-VI's with those of III-V's. In contrast to the III-V's, where a neutral vacancy has an odd number of electrons, a neutral vacancy in a II-VI semiconductor has an even number. We find that single anion vacancies in Ill-V's can behave as both donors and acceptors, and follow observed trends with ionicity and alloy composition. We also find that single cation vacancies in II-VI's behave as double acceptors and the anion vacancies behave as shallow double donors. We suggest experiments to test the importance of vacancies in determining the Fermi level pinning position for II-VI's.


Item Type:Article
Related URLs:
URLURL TypeDescription
http://dx.doi.org/10.1116/1.571048DOIUNSPECIFIED
http://avspublications.org/jvst/resource/1/jvstal/v19/i3/p508_s1PublisherUNSPECIFIED
Additional Information:© 1981 American Vacuum Society. Received 30 March 1981; 18 June 1981. The authors acknowledge a number of very useful discussions with Professor W. E. Spicer and H. Wieder. Work supported in part by the Office of Naval Research under Contract no. N00014-79-C-0797.
Funders:
Funding AgencyGrant Number
Office of Naval Research (ONR)N00014-79-C-0797
Subject Keywords:vacancies; surfaces; fermi level; ii−vi semiconductors; iii−v semiconductors
Classification Code:PACS: 72.80.Ey; 73.20.Hb
Record Number:CaltechAUTHORS:20120717-163206505
Persistent URL:http://resolver.caltech.edu/CaltechAUTHORS:20120717-163206505
Official Citation:Surface vacancies in II--VI and III--V zinc blende semiconductors M. S. Daw, D.L. Smith, C.A. Swarts, and T.C. McGill, J. Vac. Sci. Technol. 19, 508 (1981), DOI:10.1116/1.571048
Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:32538
Collection:CaltechAUTHORS
Deposited By: Aucoeur Ngo
Deposited On:18 Jul 2012 14:45
Last Modified:26 Dec 2012 15:36

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