Wilt, D. and Lau, K. Y. and Yariv, A. (1981) The effect of lateral carrier diffusion on the modulation response of a semiconductor laser. Journal of Applied Physics, 52 (8). pp. 4970-4974. ISSN 0021-8979 http://resolver.caltech.edu/CaltechAUTHORS:20120718-093530769
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The effect of lateral carrier diffusion upon the modulation characteristics of the semiconductor laser is investigated. A self‐consistent analysis of the spatially dependent rate equations is performed using a finite element model. The transverse junction stripe laser is treated as an example and a comparison is made between lateral carrier diffusion and spontaneous emission as damping mechanisms for the resonance peak. Experimental results bear out the conclusion that the relaxation resonance in this device is damped mainly by lateral carrier diffusion. In addition, a simple analytic result is presented which illustrates qualitatively the effect of lateral carrier diffusion upon such devices. The conclusion from this result is that lateral carrier diffusion serves to damp the relaxation resonance in the semiconductor laser quite well, but probably will not serve to improve the upper limit on modulation frequency as might have been suspected.
|Additional Information:||© 1981 American Institute of Physics. Received 30 March 1981; accepted for publication 30 April 1980. This work was supported by the Office of Naval Research and the National Science Foundation.|
|Subject Keywords:||Semiconductor lasers, Response functions, Modulation, Charge carriers, Diffusion, Mathematical models, Data, Partial dependence, Equations, Resonance, Comparative evaluations, Relaxation, Theoretical data|
|Classification Code:||PACS: 42.55.Px; 42.60.Fc|
|Usage Policy:||No commercial reproduction, distribution, display or performance rights in this work are provided.|
|Deposited By:||Tony Diaz|
|Deposited On:||18 Jul 2012 18:11|
|Last Modified:||26 Dec 2012 15:36|
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